# US 7,745,910 B1 · Semiconductor device having RF shielding and method therefor > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,745,910 B1 - Document ID: US7745910B1 - Status: Granted - Kind: B1 - Application number: 11/775,492 - Filed: 2007-07-10 - Granted: 2010-06-29 - Earliest claimed: 2007-07-10 - Assignees: Amkor Technology, Inc. - Inventors: Timothy L. Olson; Christopher M. Scanlan; Christopher J. Berry - Web page: https://patentgrep.com/patent/US7745910B1 ## CPC - H10W 42/20: protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons - H10W 42/276: {the arrangements being on an external surface of the package, e.g. on the outer surface of an encapsulation} - H10W 74/014: {using batch processing} - H10W 74/114: {by a substrate and the encapsulations} - H10W 72/0198: {batch processes} - H10W 72/536: {the connected ends being ball-shaped} - H10W 72/884: {Die-attach connectors and bond wires} - H10W 74/00: Encapsulations, e.g. protective coatings - H10W 74/10: characterised by their shape or disposition - H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A semiconductor device has a substrate comprising at least one dielectric layer and at least one metal layer on a first surface of the substrate. A die is attached to the first surface of the substrate. A mold compound is used to encapsulate the die and partially encapsulate the first surface of the substrate. The mold compound has a protrusion proximate to the at least one metal layer. A conductive material covers the mold compound, including the protrusion, and contacts the at least one metal layer. ## Claims ### Claim 1 A semiconductor device comprising: a substrate comprising at least one dielectric layer and at least one metal layer on a first surface of the substrate; a die attached to the first surface of the substrate; a mold compound encapsulating the die and partially encapsulating the first surface of the substrate, the mold compound having a protrusion formed below a top surface of the mold compound, an angled surface of the mold compound extending from the protrusion, the at least one metal layer exposed along a distal end of the angled surface; and a conductive material that covers the mold compound, including the protrusion, and contacts the at least one metal layer exposed. ### Claim 2 (depends on 1) The semiconductor device in accordance with claim 1 wherein the protrusion is a ledge formed on at least one side surface of the substrate below the top surface of the mold compound. ### Claim 3 (depends on 2) The semiconductor device in accordance with claim 2 wherein the ledge extends approximately a length of the at least one side surface of the substrate. ### Claim 4 (depends on 2) The semiconductor device in accordance with claim 2 wherein the conductive material conformally covers the mold compound, including the protrusion, and contacts the at least one metal layer. ### Claim 5 (depends on 4) The semiconductor device in accordance with claim 4 wherein the conductive material completely covers the mold compound, including the protrusion, and contacts the at least one metal layer such that the conductive material being substantially planar to a side surface and the horizontal surface of the ledge. ### Claim 6 (depends on 2) The semiconductor device in accordance with claim 2 further comprising a plurality of vias formed in the mold compound, the plurality of vias forming a plurality of ledges, the at least one metal layer exposed on horizontal surfaces of the plurality of ledges. ### Claim 7 (depends on 1) The semiconductor device in accordance with claim 1 further comprising at least one via formed in the substrate, the via coupled to the at least one metal layer exposed on the horizontal surface of the substrate, the conductive material coupled directly to at least one metal layer exposed through the at least one via. ### Claim 8 (depends on 7) The semiconductor device in accordance with claim 7 wherein the conductive material conformally covers the mold compound, including the protrusion, and contacts the at least one metal layer. ### Claim 9 (depends on 7) The semiconductor device in accordance with claim 7 further comprising a passivation layer applied to the conductive material. ### Claim 10 A semiconductor device comprising: a substrate having at least one metal layer on a first surface of the substrate; a die attached to the first surface of the substrate; a mold compound encapsulating the die and partially encapsulating the first surface of the substrate, the mold compound having a ridge formed below a top surface of the substrate, a surface of the mold compound extending from the ridge and exposing the at least one metal layer on the first surface of the substrate; and a conductive material that covers the mold compound, including the ridge, and contacts the at least one metal layer. ### Claim 11 (depends on 10) The semiconductor device in accordance with claim 10 wherein the ridge comprises: an L-shaped ledge formed below the top surface of the mold compound and on at least one side surface of the mold compound; and an angled surface running away from a horizontal member of the L-shaped ledge, the at least one metal layer exposed at a bottom of the angled surface. ### Claim 12 (depends on 10) The semiconductor device in accordance with claim 10 wherein the ridge extends approximately a length of the at least one side surface of the substrate. ### Claim 13 (depends on 10) The semiconductor device in accordance with claim 10 wherein the conductive material conformally covers the mold compound, including the ridge, and contacts the at least one metal layer. ### Claim 14 (depends on 13) The semiconductor device in accordance with claim 13 wherein the conductive material completely covers the mold compound, including the ridge, and contacts the at least one metal layer such that the conductive material being substantially planar to a side surface and the horizontal surface of the ledge. ### Claim 15 (depends on 10) The semiconductor device in accordance with claim 10 further comprising a plurality of vias formed in the mold compound, the plurality of vias forming a plurality of ridges, the at least one metal layer exposed on a bottom area of the plurality of ridges. ### Claim 16 (depends on 10) The semiconductor device in accordance with claim 10 further comprising at least one via formed in the substrate, the via coupled to the at least one metal layer exposed on the first surface of the substrate, the conductive material coupled directly to at least one metal layer exposed through the at least one via. ### Claim 17 (depends on 16) The semiconductor device in accordance with claim 16 wherein the conductive material conformally covers the mold compound, including the ridge, and contacts the at least one metal layer. ### Claim 18 (depends on 16) The semiconductor device in accordance with claim 16 further comprising a passivation layer applied to the conductive material. ### Claim 19 A semiconductor device comprising: a substrate having at least one metal layer on a first surface of the substrate; a die attached to the first surface of the substrate; a mold compound encapsulating the die and partially encapsulating the first surface of the substrate, the mold compound having a ridge, wherein the ridge comprises: an L-shaped ledge formed on at least one side surface of the mold compound; and an angled surface running away from a horizontal member of the L-shaped ledge, the at least one metal layer exposed at a bottom of the angled surface; and a conductive material that covers the mold compound, including the ridge, and contacts the at least one metal layer. ### Claim 20 (depends on 19) The semiconductor device in accordance with claim 19 further comprising a plurality of vias formed in the mold compound, the plurality of vias forming a plurality of ridges, the at least one metal layer exposed on a bottom area of the plurality of ridges.