# US 7,745,899 B2 · Photomask and its method of manufacture

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 7,745,899 B2
- Document ID: US7745899B2
- Status: Granted
- Kind: B2
- Application number: 11/832,270
- Filed: 2007-08-01
- Published: 2008-02-21
- Granted: 2010-06-29
- Earliest claimed: 2006-08-21
- Assignees: Samsung Electronics Co., Ltd.
- Inventors: Ho-Jin Oh; Je-Min Park; Jee-Eun Jung
- Web page: https://patentgrep.com/patent/US7745899B2

## CPC

- G03F 1/70: Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
- G03F 1/00: Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- H10D 64/519: {characterised by their top-view geometrical layouts}
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

An embodiment of a photomask for forming gate lines and a method of manufacturing semiconductor devices using the photomask is disclosed. The photomask includes a photomask substrate, gate line mask patterns that define gate lines that cross at least one active region on a semiconductor substrate, and that are arranged in parallel, gate tab mask patterns formed on both sides of each gate line mask pattern, and joints formed between adjacent gate tab mask patterns, and that include a separation region. A relatively large gate tab mask pattern can be formed using the photomask. And a short channel effect at the boundary of the active region can be improved with the large gate tab mask pattern, so the characteristics and reliability of the semiconductor devices can be improved.

## Claims

### Claim 1

A photomask, comprising: a photomask substrate;
a plurality of gate line mask patterns adapted to span across at least one active region on a semiconductor substrate, first and second ones of the gate line mask patterns forming adjacent gate line patterns;
gate mask pattern tabs extending from sides of each of the gate line mask patterns, gate mask pattern tabs on adjacent gate line patterns being adjacent gate mask pattern tabs;
joints disposed between the adjacent gate mask pattern tabs; and
a separation region included in the joints.

### Claim 2 (depends on 1)

The photomask of claim 1, wherein the gate mask pattern tabs are arranged to cover at least a portion of a boundary between the active region and an isolation region of the semiconductor substrate.

### Claim 3 (depends on 1)

The photomask of claim 1, further including a hole defined by only the joints.

### Claim 4 (depends on 1)

The photomask of claim 1, further including a hole defined by the joints and one or more of the gate mask pattern tabs.

### Claim 5 (depends on 3)

The photomask of claim 3, wherein the shape of the hole is one selected from the group consisting of a tetragon, a circle, an oval, a diamond, a triangle, and a polygon.

### Claim 6 (depends on 1)

The photomask of claim 1, wherein the photomask is configured for light having a wavelength.

### Claim 7 (depends on 6)

The photomask of claim 6, wherein a width of the separation region is equal to or less than half of the wavelength of the light.

### Claim 8 (depends on 1)

The photomask of claim 1, wherein the photomask substrate is transparent, and the gate line mask patterns and the gate tab mask patterns are opaque.

### Claim 9 (depends on 6)

The photomask of claim 6, wherein the photomask is configured so that light, transmitted through the gate line mask patterns, the gate tab mask patterns, and the joints, has a phase difference with light that is transmitted through only the photomask substrate.

### Claim 10 (depends on 1)

The photomask of claim 1, wherein the gate line mask patterns are arranged parallel to each other.

### Claim 11

A semiconductor device that is formed by a method of manufacturing, the method comprising:
providing a semiconductor substrate that includes an active region defined by an isolation region;
forming a gate insulating layer and a gate electrode layer on the semiconductor substrate;
forming a photoresist layer on the gate electrode layer; forming a photoresist pattern that defines gate lines on the gate electrode layer by a photolithography process using a photomask using a light having a wavelength; and
forming the gate lines by patterning the gate electrode layer,
wherein the photomask comprises:
a photomask substrate; gate line mask patterns that define the gate lines, which cross at least one of the active regions on the semiconductor substrate, and are arranged in parallel to each other;
gate tab mask patterns extending from both sides of the each of the gate line mask patterns;
joints formed between adjacent gate tab mask patterns; and
a separation region including in the joints.