# US 7,745,862 B2 · CMOS image sensor and method for manufacturing the same

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- Number: US 7,745,862 B2
- Document ID: US7745862B2
- Status: Granted
- Kind: B2
- Application number: 12/232,682
- Filed: 2008-09-22
- Published: 2009-03-19
- Granted: 2010-06-29
- Earliest claimed: 2004-12-30
- Assignees: Dongbu Electronics Co., Ltd.
- Inventors: Hyun Joon Sohn
- Web page: https://patentgrep.com/patent/US7745862B2

## CPC

- H10F 39/18: Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F 39/014: {of CMOS image sensors}
- H10F 39/182: {Colour image sensors}
- H10F 39/8053: {Colour filters}
- H10F 39/8063: {Microlenses}
- H10F 39/811: {Interconnections}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

A CMOS image sensor and a method for manufacturing the same improves photosensitivity and prevent loss of light by forming a photo-sensing unit under a color filter. The CMOS image sensor may include a plurality of transistors formed on a semiconductor substrate, a metal line formed over the plurality of transistors for electrically connecting the plurality of transistors, and a plurality of photodiodes electrically connected with the plurality of transistors and formed over the metal line.

## Claims

### Claim 1

A CMOS image sensor comprising:
a plurality of transistors formed on a semiconductor substrate;
a metal line formed over the plurality of transistors for electrically connecting the plurality of transistors;
a plurality of photodiodes electrically connected with the transistors and formed over the metal line;
a color filter formed on the plurality of photodiodes;
a planarization layer formed on the color filter; and
a micro-lens formed on the planarization layer.

### Claim 2 (depends on 1)

The CMOS image sensor of claim 1, further comprising a metal dielectric layer formed between the plurality of transistors and the plurality of photodiodes.

### Claim 3 (depends on 2)

The CMOS image sensor of claim 2, wherein the metal dielectric layer comprises a TEOS oxide layer and an SOG oxide layer.

### Claim 4 (depends on 2)

The CMOS image sensor of claim 2, wherein the metal dielectric layer comprises:
a first metal dielectric layer formed between the plurality of transistors and the metal line; and
a second metal dielectric layer formed between the metal line and the plurality of photodiodes.

### Claim 5 (depends on 2)

The CMOS image sensor of claim 2, further comprising a plug formed in the metal dielectric layer for electrically connecting one of the plurality of transistors with one of the plurality of photodiodes.

### Claim 6 (depends on 1)

The CMOS image sensor of claim 1, wherein the metal line is formed of two or more metal line layers.

### Claim 7 (depends on 1)

The CMOS image sensor of claim 1, further comprising an isolation region formed between each of the plurality of photodiodes.