# US 7,745,861 B2 · Photodiodes and image sensors including the same

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- Number: US 7,745,861 B2
- Document ID: US7745861B2
- Status: Granted
- Kind: B2
- Application number: 11/907,569
- Filed: 2007-10-15
- Published: 2008-06-05
- Granted: 2010-06-29
- Earliest claimed: 2006-12-01
- Assignees: Samsung Electronics Co., Ltd.
- Inventors: Gi-bum Kim; Taek Kim
- Web page: https://patentgrep.com/patent/US7745861B2

## CPC

- H10F 77/12: Active materials
- H10F 30/221: the potential barrier being a PN homojunction
- H10F 30/223: the potential barrier being a PIN barrier
- H10F 39/803: {Pixels having integrated switching, control, storage or amplification elements}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

Example embodiments may provide a photodiode formed of semiconductor silicide and/or an image sensor using a photodiode formed of semiconductor silicide. The photodiode may have a p-n junction structure including a p-type semiconductor silicide and an n-type semiconductor silicide. The image sensor may include a substrate, a photodetector unit having the photodiode, which may perform photoelectric transformation, and/or a signal transmitter transmitting a signal generated by the photodetector unit to an output unit. The photodetector unit and/or the signal transmitter may be integrated in the substrate.

## Claims

### Claim 1

A photodiode comprising:
a p-type semiconductor silicide;
an n-type semiconductor silicide that forms a p-n junction structure with the p-type semiconductor silicide; and
an intrinsic layer between the p-type semiconductor silicide and the n-type semiconductor silicide so as to form a PIN structure,
wherein the intrinsic layer includes insulating amorphous silicon (a-Si).

### Claim 2 (depends on 1)

The photodiode of claim 1, wherein the p-type semiconductor silicide and the n-type semiconductor silicide include at least one of FeSi2, Ru2Si3, Os2Si3, and Ir3Si5.

### Claim 3

An image sensor comprising:
a substrate;
a photodiode including a p-type semiconductor silicide and an n-type semiconductor silicide that forms a p-n junction structure with the p-type semiconductor silicide; and
a signal transmitter in the substrate, the signal transmitter being configured to transmit a signal generated by the photodiode to an output unit.

### Claim 4 (depends on 3)

The image sensor of claim 3, wherein the p-type semiconductor silicide and the n-type semiconductor silicide include at least one of FeSi2, Ru2Si3, Os2Si3, and Ir3Si5.

### Claim 5 (depends on 3)

The image sensor of claim 3, wherein the photodiode further includes an intrinsic layer between the p-type semiconductor silicide and the n-type semiconductor silicide so as to form a PIN structure.

### Claim 6 (depends on 3)

The image sensor of claim 3, wherein the intrinsic layer includes insulating amorphous silicon (a-Si).

### Claim 7 (depends on 3)

The image sensor of claim 3, wherein the signal transmitter includes a complimentary metal oxide semiconductor (CMOS).

### Claim 8 (depends on 3)

The image sensor of claim 3, further comprising:
a wire layer between the photodiode and the signal transmitter, wherein the photodiode is above the signal transmitter.

### Claim 9 (depends on 3)

The image sensor of claim 3, wherein the signal transmitter includes a charge coupled device (CCD).