# US 7,745,854 B2 · Substrate for growing compound semiconductor and epitaxial growth method

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- Number: US 7,745,854 B2
- Document ID: US7745854B2
- Status: Granted
- Kind: B2
- Application number: 12/223,453
- Filed: 2007-02-02
- Published: 2009-01-29
- Granted: 2010-06-29
- Earliest claimed: 2006-02-02
- Assignees: Nippon Mining & Metals Co., Ltd.
- Inventors: Hideki Kurita; Ryuichi Hirano
- Web page: https://patentgrep.com/patent/US7745854B2

## CPC

- C30B 25/18: characterised by the substrate
- C30B 29/40: AIIIBV compounds {wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi}
- Y10T 428/24479: including variation in thickness
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

It is to provide a substrate for growing a semiconductor, which is effective for suppressing an occurrence of surface defects different in type from hillock defects in case of epitaxially growing a compound semiconductor layer, particularly an Al-based compound semiconductor layer. In a substrate for growing a compound semiconductor, in which a crystal surface inclined at a predetermined off angle with respect to a (100) plane is a principal plane, an angle made by a direction of a vector obtained by projecting a normal vector of the principal plane on the (100) plane and one direction of a [0-11] direction, a [01-1] direction, a [011] direction and a [0-1-1] direction is set to be less than 35°, and the compound semiconductor layer is epitaxially grown on the substrate.

## Claims

### Claim 1

A substrate for growing an Al-based compound semiconductor, which is an InP substrate in which a crystal surface inclined at a predetermined off angle with respect to a (100) plane is a principal plane, the substrate being used in a metal organic chemical vapor deposition method,
wherein an angle made by a direction of a vector obtained by projecting a normal vector of the principal plane on the (100) plane and one direction of a [0-11] direction, a [01-1] direction, a [011] direction and a [0-1-1] direction is less than 35°, and
wherein the predetermined off angle is within a range of 0.05° to 0.2°.

### Claim 2

An epitaxial growth method, comprising:
using an InP substrate for growing an Al-based compound semiconductor, the substrate comprising a principal plane inclined at a predetermined off angle with respect to a (100) plane, wherein an angle made by a direction of a vector obtained by projecting a normal vector of the principal plane on the (100) plane and one direction of a [0-11] direction, a [01-1] direction, a [011] direction and a [0-1-1] direction is less than 35°; and
epitaxially growing Al-based compound semiconductor layer on the substrate by a metal organic chemical vapor deposition method,
wherein the predetermined off angle is within a range of 0.05° to 0.2°.

### Claim 3 (depends on 1)

The substrate as claimed in claim 1, wherein the Al-based compound semiconductor is an InAlAs epitaxial crystal.

### Claim 4 (depends on 2)

The epitaxial growth method as claimed in claim 2, wherein the Al-based compound semiconductor is an InAlAs epitaxial crystal.