# US 7,745,853 B2 · Multi-layer structure with a transparent gate

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- Number: US 7,745,853 B2
- Document ID: US7745853B2
- Status: Granted
- Kind: B2
- Application number: 12/141,133
- Filed: 2008-06-18
- Published: 2009-12-24
- Granted: 2010-06-29
- Earliest claimed: 2008-06-18
- Assignees: Chang Gung University
- Inventors: Hsien-Chin Chiu; Liann-Be Chang; Che-Kai Lin
- Web page: https://patentgrep.com/patent/US7745853B2

## CPC

- H10D 30/473: {having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT}
- H10D 30/47: having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
- H10D 64/311: {Gate electrodes for field-effect devices}
- H10F 30/227: the potential barrier being a Schottky barrier
- H10F 77/244: {made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

A multi-layer structure with a transparent gate includes a MHEMT device structure comprising a GaAs substrate, a Schottky layer and a cap layer formed on the Schottky layer; a transparent gate formed on the Schottky layer being an indium tin oxide, ITO; and a drain and a source formed on the cap layer. Moreover, the MHEMT device structure includes a graded buffer, a buffer layer, a first spacer layer, a channel layer, and a second spacer layer formed between the GaAs substrate and the Schottky layer in a stacked fashion. The multi-layer structure is a transparent gate HEMT employing indium tin oxide which can make HEMT more sensitive to the light wave.

## Claims

### Claim 1

A multi-layer structure comprising:
a MHEMT device structure comprising a GaAs substrate, a Schottky layer, and a cap layer formed on the Schottky layer;
a transparent gate formed on the Schottky layer and being an indium tin oxide;
a drain and a source formed on the cap layer; and
the MHEMT device structure comprises a graded buffer layer, a buffer layer, a first spacer layer, a channel layer, and a second spacer layer formed between the GaAs substrate and the Schottky layer in a stacked fashion.

### Claim 2 (depends on 1)

The multi-layer structure as claimed in claim 1, wherein the MHEMT device structure comprises a first planar doping layer formed between the buffer layer and the first spacer layer.

### Claim 3 (depends on 1)

The multi-layer structure as claimed in claim 1, wherein the MHEMT device structure comprises a second planar doping layer formed between the second spacer layer and the Schottky layer.

### Claim 4 (depends on 1)

The multi-layer structure as claimed in claim 1, wherein the channel layer is of InGaAs.

### Claim 5 (depends on 1)

The multi-layer structure as claimed in claim 1, wherein the graded buffer layer and the buffer layer are of InxAl1-xAs and x is in the range between 0.01 and 0.5.

### Claim 6 (depends on 1)

The multi-layer structure as claimed in claim 1, wherein the cap layer is of InGaAs.

### Claim 7 (depends on 1)

The multi-layer structure as claimed in claim 1, wherein the drain and the source are selected from a group consisting of titanium, gold, nickel, palladium, and platinum.

### Claim 8 (depends on 1)

The multi-layer structure as claimed in claim 1, wherein the drain and the source are selected from a mixture consisting of at least two of titanium, gold, nickel, palladium, and platinum.