# US 7,745,852 B2 · Hetero junction field effect transistor and method of fabricating the same

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- Number: US 7,745,852 B2
- Document ID: US7745852B2
- Status: Granted
- Kind: B2
- Application number: 11/806,783
- Filed: 2007-06-04
- Published: 2007-12-27
- Granted: 2010-06-29
- Earliest claimed: 2006-06-27
- Assignees: Sharp Kabushiki Kaisha
- Inventors: Nobuaki Teraguchi
- Web page: https://patentgrep.com/patent/US7745852B2

## CPC

- H10D 30/4755: {having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs}
- H10D 30/015: {of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT}
- H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

There is provided a hetero junction field effect transistor including: a first layer of a nitride based, group III-V compound semiconductor; a second layer of a nitride based, group III-V compound semiconductor containing a rare earth element, overlying the first layer; a pair of third layers of a nitride based, group III-V compound semiconductor, overlying the second layer, the third layers being spaced from each other; a gate electrode disposed between the third layers at least a region of the second layer; and a source electrode overlying one of the third layers and a drain electrode overlying an other of the third layers. A method of fabricating the hetero junction field effect transistor is also provided.

## Claims

### Claim 1

A hetero junction field effect transistor, comprising:
a channel layer of a nitride based, group III-V compound semiconductor;
a hetero characteristic improvement layer of a nitride based, group III-V compound semiconductor overlying and physically contacting said channel layer;
a first layer of a nitride based, group III-V compound semiconductor, overlying and physically contacting said hetero characteristic improvement layer;
a second layer of a nitride based, group III-V compound semiconductor containing a rare earth element, overlying and physically contacting said first layer;
a pair of third layers of a nitride based, group III-V compound semiconductor, overlying and physically contacting said second layer, said third layers being spaced from each other;
a two dimensional electron gas layer provided between said channel layer and said hetero characteristic improvement layer;
a gate electrode disposed between said third layers on at least a region of said second layer; and
a source electrode overlying one of said third layers and a drain electrode overlying an other of said third layers.

### Claim 2 (depends on 1)

The hetero junction field effect transistor according to claim 1, wherein said rare earth element is at least one selected from the group consisting of Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu.

### Claim 3 (depends on 1)

The hetero junction field effect transistor according to claim 1, wherein said third layer is formed of an n type, nitride based, group III-V compound semiconductor.

### Claim 4 (depends on 1)

The hetero junction field effect transistor according to claim 1, wherein said second layer has a thickness of at most 5 nm.