# US 7,745,849 B2 · Enhancement mode III-nitride semiconductor device with reduced electric field between the gate and the drain > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,745,849 B2 - Document ID: US7745849B2 - Status: Granted - Kind: B2 - Application number: 12/234,782 - Filed: 2008-09-22 - Published: 2009-03-26 - Granted: 2010-06-29 - Earliest claimed: 2007-09-20 - Assignees: International Rectifier Corporation - Inventors: Michael A. Briere - Web page: https://patentgrep.com/patent/US7745849B2 ## CPC - H10D 30/4755: {having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs} - H10D 62/221: {of FETs} - H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN} - H10D 62/854: further characterised by the dopants - H10D 64/111: {Field plates} - H10D 64/511: {for IGFETs} - H10D 84/01: Manufacture or treatment - H10D 84/05: using Group III-V technology - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract An enhancement mode III-nitride heterojunction device that includes a region between the gate and the drain electrode thereof that is at the same potential as the source electrode thereof when the device is operating. ## Claims ### Claim 1 A power semiconductor device comprising: a III-nitride heterojunction that includes one III-nitride body over another III-nitride body, said one III-nitride body and said another III-nitride body having different bandgaps, whereby a two-dimensional electron gas is generated inside said III-nitride heterojunction; a source electrode and a drain electrode both disposed over and coupled to said III-nitride heterojunction; a gate electrode coupled to said III-nitride heterojunction; a negatively charged region formed in said III-nitride heterojunction directly under said gate electrode; and a field plate coupled to said III-nitride heterojunction and disposed completely between said gate electrode and said drain electrode, wherein said field plate is electrically coupled to said source electrode, whereby said field plate is at the same potential as said source electrode when said device is operating. ### Claim 2 (depends on 1) The power semiconductor device of claim 1, wherein said negatively charged region includes negatively charged ions. ### Claim 3 (depends on 1) The power semiconductor device of claim 1, wherein said negatively charged region includes fluorine ions. ### Claim 4 (depends on 1) The power semiconductor device of claim 1, wherein said negatively charged region includes chlorine ions. ### Claim 5 (depends on 1) The power semiconductor device of claim 1, wherein said field plate is schottky coupled to said III-nitride heterojunction. ### Claim 6 (depends on 1) The power semiconductor device of claim 1, wherein said field plate is capacitively coupled to said III-nitride heterojunction through a dielectric body. ### Claim 7 (depends on 1) The power semiconductor device of claim 1, wherein said gate electrode is schottky coupled to said III-nitride heterojunction. ### Claim 8 (depends on 1) The power semiconductor device of claim 1, wherein said gate electrode is capacitively coupled to said III-nitride heterojunction through a gate dielectric body. ### Claim 9 (depends on 1) The power semiconductor device of claim 1, wherein said one III-nitride body is comprised of AlGaN and said another III-nitride body is comprised of GaN. ### Claim 10 A driver circuit that includes a III-nitride power semiconductor device, said III-nitride power semiconductor device comprising: a III-nitride heterojunction that includes one III-nitride body over another III-nitride body, said one III-nitride body and said another III-nitride body having different bandgaps, whereby a two-dimensional electron gas is generated inside said III-nitride heterojunction; a source electrode and a drain electrode both disposed over and coupled to said III-nitride heterojunction; a gate electrode coupled to said III-nitride heterojunction; a negatively charged region formed in said III-nitride heterojunction directly under said gate electrode; and a field plate coupled to said III-nitride heterojunction and disposed completely between said gate electrode and said drain electrode, wherein said field plate is electrically coupled to said source electrode, whereby said field plate is at the same potential as said source electrode when said device is operating. ### Claim 11 (depends on 10) The power semiconductor device of claim 10, wherein said negatively charged region includes negatively charged ions. ### Claim 12 (depends on 10) The power semiconductor device of claim 10, wherein said negatively charged region includes fluorine ions. ### Claim 13 (depends on 10) The power semiconductor device of claim 10, wherein said negatively charged region includes chlorine ions. ### Claim 14 (depends on 10) The power semiconductor device of claim 10, wherein said field plate is schottky coupled to said III-nitride heterojunction. ### Claim 15 (depends on 10) The power semiconductor device of claim 10, wherein said field plate is capacitively coupled to said III-nitride heterojunction through a dielectric body. ### Claim 16 (depends on 10) The power semiconductor device of claim 10, wherein said gate electrode is schottky coupled to said III-nitride heterojunction. ### Claim 17 (depends on 10) The power semiconductor device of claim 10, wherein said gate electrode is capacitively coupled to said III-nitride heterojunction through a gate dielectric body. ### Claim 18 (depends on 10) The power semiconductor device of claim 10, wherein said one III-nitride body is comprised of AlGaN and said another III-nitride body is comprised of GaN.