# US 7,745,848 B1 · Gallium nitride material devices and thermal designs thereof

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- Number: US 7,745,848 B1
- Document ID: US7745848B1
- Status: Granted
- Kind: B1
- Application number: 11/839,040
- Filed: 2007-08-15
- Granted: 2010-06-29
- Earliest claimed: 2007-08-15
- Assignees: Nitronex Corporation
- Inventors: Pradeep Rajagopal; Chul H. Park; Craig E. Strautin
- Web page: https://patentgrep.com/patent/US7745848B1

## CPC

- H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN}
- H10D 30/4755: {having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs}
- H10D 62/117: {Shapes of semiconductor bodies}
- H10W 40/228: {the projecting parts being wire-shaped or pin-shaped}
- H10W 40/255: {having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Gallium nitride material devices and methods associated with the devices are described. The devices may be designed to provide enhanced thermal conduction and reduced thermal resistance. The increased thermal conduction through and out of the gallium nitride devices enhances operability of the devices, including providing excellent RF operation, reliability, and lifetime.

## Claims

### Claim 1

A gallium nitride material device comprising:
a plurality of transistors, the transistors comprising:
a gallium nitride material region;
a source electrode, a drain electrode and a gate electrode associated with the gallium nitride material region,
wherein an active region is defined in the gallium nitride material region between an edge of the source electrode closest to the gate electrode and an edge of the drain electrode closest the gate electrode,
the device including a via that surrounds at least the active region of at least one transistor.

### Claim 2 (depends on 1)

The device of claim 1, wherein the via surrounds the source electrode, the drain electrode and the gate electrode of at least one transistor.

### Claim 3 (depends on 1)

The device of claim 1, wherein the plurality of transistors are arranged in a cell.

### Claim 4 (depends on 3)

The device of claim 3, wherein the via surrounds at least the active regions of each transistor in the cell.

### Claim 5 (depends on 3)

The device of claim 3, wherein the via surrounds the source electrode, the drain electrode and the gate electrode of each transistor in the cell.

### Claim 6 (depends on 3)

The device of claim 3, wherein the device comprises more than one cell, each cell comprising a plurality of transistors, each transistor comprising:
a gallium nitride material region; and
a source electrode, a drain electrode and a gate electrode associated with the gallium nitride material region,
wherein an active region is defined in the gallium nitride material region between an edge of the source electrode closest to the gate electrode and an edge of the drain electrode closest the gate electrode.

### Claim 7 (depends on 3)

The device of claim 3, wherein the device includes a plurality of vias with a via being associated with each cell such that the via surrounds at least the active regions of the transistors in each cell.

### Claim 8 (depends on 3)

The device of claim 3, wherein the gate electrode of each transistor within a cell is separated from a gate electrode of an adjacent transistor within the cell by a gate pitch and each cell is separated from an adjacent cell by an inter-cell spacing, each inter-cell spacing being greater than each gate pitch.

### Claim 9 (depends on 1)

The device of claim 1, wherein the via surrounds the source electrode, the drain electrode and the gate electrode of each transistor.

### Claim 10 (depends on 1)

The device of claim 1, wherein a thermally conductive material is formed in the via.

### Claim 11 (depends on 10)

The device of claim 10, wherein the thermally conductive material comprises copper.

### Claim 12 (depends on 1)

The device of claim 1, wherein the via is formed in regions under the gallium nitride material region.

### Claim 13 (depends on 1)

The device of claim 1, wherein the transistor further comprises a silicon substrate.

### Claim 14 (depends on 1)

The device of claim 1, wherein the silicon substrate is an SOI substrate.

### Claim 15 (depends on 13)

The device of claim 13, wherein the via is formed in the silicon substrate.

### Claim 16

A method of producing a gallium nitride material device comprising:
providing a plurality of transistors, the transistors comprising:
a gallium nitride material region;
a source electrode, a drain electrode and a gate electrode associated with the gallium nitride material region,
wherein an active region is defined in the gallium nitride material region between an edge of the source electrode closest to the gate electrode and an edge of the drain electrode closest the gate electrode,
providing at least one via that surrounds at least the active region of at least one transistor.