# US 7,745,839 B2 · Double wavelength semiconductor light emitting device and method of manufacturing the same

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- Number: US 7,745,839 B2
- Document ID: US7745839B2
- Status: Granted
- Kind: B2
- Application number: 12/224,287
- Filed: 2007-02-23
- Published: 2009-05-21
- Granted: 2010-06-29
- Earliest claimed: 2006-02-23
- Assignees: Rohm Co., Ltd.
- Inventors: Shinichi Tamai; Ken Nakahara; Atsushi Yamaguchi
- Web page: https://patentgrep.com/patent/US7745839B2

## CPC

- H01S 5/4031: {Edge-emitting structures}
- B82Y 20/00: Nanooptics, e.g. quantum optics or photonic crystals
- H01S 5/04257: {having positive and negative electrodes on the same side of the substrate}
- H01S 5/20: Structure or shape of the semiconductor body to guide the optical wave {; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers}
- H01S 5/22: having a ridge or stripe structure
- H01S 5/2214: {based on oxides or nitrides}
- H01S 5/305: {characterised by the doping materials used in the laser structure}
- H01S 5/3063: {using Mg}
- H01S 5/3211: {characterised by special cladding layers, e.g. details on band-discontinuities}
- H01S 5/34333: {with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser}
- H01S 5/4087: {emitting more than one wavelength}
- H01S 2304/04: MOCVD or MOVPE
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES

## Abstract

Provided are a double wavelength semiconductor light emitting device, having an n electrode and p electrode disposed on the same surface side, in which the area of a chip is reduced to increase the number of chips taken from one single wafer, in which light focusing performance of double wavelength optical beams are improved, and in which an active layer of a light emitting element having a longer wavelength can be prevented from deteriorating in a process of manufacturing; and a method of manufacturing the same. Semiconductor lasers D1 and D2 as two light emitting elements having different wavelengths are integrally formed on a common substrate 1. A semiconductor laminate A is deposited on an n-type contact layer 21 in a semiconductor laser D1, and a semiconductor laminate B is deposited in a semiconductor laser D2. The semiconductor laminate A and semiconductor laminate B are configured to have different layer structures. An n electrode 12 formed between the semiconductor lasers D1 and D2 is shared by the semiconductor lasers D1 and D2, and serves as a common electrode on an n side. Additionally, the semiconductor laminate having a shorter wavelength is crystal-grown firstly.

## Claims

### Claim 1

A double wavelength semiconductor light emitting device in which two light emitting elements including a p-type semiconductor layer and an n-type semiconductor layer for emitting lights having different wavelengths are formed on one single substrate and in which an n electrode and p electrodes corresponding to the two light emitting elements are disposed, wherein
the n electrode is an n side electrode common to the two light emitting elements;
the active layers in the two light emitting elements are composed of nitride layers containing Indium at different composition ratios; and
the two light emitting elements include an insulating film isolating the two light emitting elements electrically and disposed in a ditch part reaching the n-type semiconductor layer through the p-type semiconductor layer at least, and an insulating film limiting current injection areas to the active layers.

### Claim 2 (depends on 1)

The double wavelength semiconductor light emitting device according to claim 1, wherein
the two light emitting elements are formed to interpose the n electrode, and the nitride semiconductor layer structures of those light emitting elements are different.

### Claim 3 (depends on 1)

The double wavelength semiconductor light emitting device according to claim 1, wherein
the n electrode and p electrodes corresponding to the two light emitting elements are disposed on the same surface side of the substrate.

### Claim 4 (depends on 2)

The double wavelength semiconductor light emitting device according to claim 2, wherein
the n electrode and p electrodes corresponding to the two light emitting elements are disposed on the same surface side of the substrate.

### Claim 5

A double wavelength semiconductor light emitting device in which two laminates including a p-type semiconductor layer and a n-type semiconductor layer for emitting lights having different wavelengths are formed on one substrate and in which n electrodes and p electrodes corresponding to the two laminates are disposed on the same surface side of the substrate, wherein
the two n electrodes corresponding to the two laminates are disposed to interpose the two laminates on the substrate; and
the active layers in the two laminates are composed of nitride layers containing Indium at different composition ratios; and
the two light emitting elements include an insulating film isolating the two laminates electrically and disposed in a ditch part reaching the n-type semiconductor layer through the p-type semiconductor layer at least, and an insulating film limiting current injection areas to the active layers.

### Claim 6 (depends on 1)

The double wavelength semiconductor light emitting device according to claim 1, wherein
the n-type semiconductor layer includes an n-type contact layer, and an n-type clad layer between the n-type contact layer and the p-type semiconductor layer, and
the ditch part is formed to reach the n-type contact layer through the n-type clad layer.

### Claim 7 (depends on 2)

The double wavelength semiconductor light emitting device according to claim 2, wherein
the n-type semiconductor layer includes an n-type contact layer, and an n-type clad layer between the n-type contact layer and the p-type semiconductor layer, and
the ditch part is formed to reach the n-type contact layer through the n-type clad layer.

### Claim 8 (depends on 5)

The double wavelength semiconductor light emitting device according to claim 5, wherein
the n-type semiconductor layer includes an n-type contact layer, and an n-type clad layer between the n-type contact layer and the p-type semiconductor layer, and
the ditch part is formed to reach the n-type contact layer through the n-type clad layer.