# US 7,745,833 B2 · Semiconductor light emitting device and fabrication method of the same

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- Number: US 7,745,833 B2
- Document ID: US7745833B2
- Status: Granted
- Kind: B2
- Application number: 11/195,528
- Filed: 2005-08-01
- Published: 2006-03-23
- Granted: 2010-06-29
- Earliest claimed: 2004-09-21
- Assignees: Epistar Corporation
- Inventors: Cheng-Chung Yang; Shao-Kun Ma; Chuan-Cheng Tu; Jen-Chau Wu
- Web page: https://patentgrep.com/patent/US7745833B2

## CPC

- H10H 20/841: Reflective coatings, e.g. dielectric Bragg reflectors
- H10H 20/8581: {characterised by their material}
- H10H 20/833: Transparent materials
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

The invention provides a semiconductor light emitting device and the fabrication method of the same. The semiconductor light emitting device according to the invention comprises a multi-layer light emitting structure and a heat conducting layer. The multi-layer light emitting structure comprises a first layer. The first layer has an exposed first surface, and it also has a first thermal conductivity. The heat conducting layer is formed on and covers the first layer. The heat conducting layer has a second thermal conductivity, wherein the second thermal conductivity is greater than the first thermal conductivity.

## Claims

### Claim 1

A semiconductor light emitting device, comprising:
a multi-layer light emitting structure, the multi-layer light emitting structure comprising a first conductivity type GaN layer with a first thermal conductivity; and
a heat conducting layer with a second thermal conductivity, the heat conducting layer being formed on the first conductivity type GaN layer;
wherein the second thermal conductivity is greater than the first thermal conductivity, and the material of the heat conducting layer comprises a periodic structure stacked alternatively with a diamond layer and an ITO layer.

### Claim 2 (depends on 1)

The semiconductor light emitting device of claim 1, wherein the multi-layer light emitting structure further comprising:
a substrate;
a second conductivity type GaN layer, the second conductivity type GaN layer being formed on the substrate;
an active layer, the active layer being formed on a first part of the surface of the second conductivity type GaN layer;
a first electrode, the first electrode being formed on a second part of the surface of the second conductivity type GaN layer; and
a second electrode, the second electrode being formed on a part of the surface of the first conductivity type GaN layer;
wherein the first conductivity type GaN layer is formed on the active layer.

### Claim 3 (depends on 2)

The semiconductor light emitting device of claim 2, wherein the multi-layer light emitting structure further comprises a transparent conductive layer being formed between the first conductivity type GaN layer and the second electrode.

### Claim 4 (depends on 1)

The semiconductor light emitting device of claim 1, wherein the heat conducting layer is a distributed Bragg reflector.

### Claim 5

A semiconductor light emitting device, comprising:
a multi-layer light emitting structure, the multi-layer light emitting structure comprising a transparent conductive layer with a first thermal conductivity; and
a heat conducting layer with a second thermal conductivity, the heat conducting layer being formed on the transparent conductive layer;
wherein the second thermal conductivity is greater than the first thermal conductivity, and the material of the heat conducting layer comprises a periodic structure stacked alternatively with a diamond layer and an ITO layer.

### Claim 6 (depends on 5)

The semiconductor light emitting device of the claim 5, wherein the multi-layer light emitting structure further comprising:
a substrate;
a second conductivity type GaN layer, the second conductivity type GaN layer being formed on the substrate;
an active layer, the active layer being formed on a first part of the surface of the second conductivity type GaN layer;
a first conductivity type GaN layer, the first conductivity type GaN layer being formed on the active layer;
a first electrode, the first electrode being formed on a second part of the surface of the second conductivity type GaN layer; and
a second electrode, the second electrode being formed on a part of the surface of the first conductivity type GaN layer;
wherein the transparent conductive layer is formed between the first conductivity type GaN layer and the second electrode.

### Claim 7 (depends on 5)

The semiconductor light emitting device of claim 5, wherein the heat conducting layer is a distributed Bragg reflector.

### Claim 8

A semiconductor light emitting device, comprising:
a multi-layer light emitting structure, the multi-layer light emitting structure comprising a first layer with a first thermal conductivity; and
a heat conducting layer with a second thermal conductivity under the first layer;
wherein the second thermal conductivity is greater than the first thermal conductivity, and the material of the heat conducting layer comprises a periodic structure stacked alternatively with a diamond layer and an ITO layer.

### Claim 9 (depends on 8)

The semiconductor light emitting device of claim 8, wherein the first layer is a substrate, the multi-layer light emitting structure further comprising:
a second conductivity type GaN layer, the second conductivity type GaN layer being formed on the substrate;
an active layer, the active layer being formed on a first part of the surface of the second conductivity type GaN layer;
a first conductivity type GaN, the first conductivity type GaN layer being formed on the active layer;
a first electrode, the first electrode being formed on a second part of the surface of the second conductivity type GaN layer; and
a second electrode, the second electrode being formed on a part of the surface of the first conductivity type GaN layer.

### Claim 10 (depends on 9)

The semiconductor light emitting device of claim 9, wherein the multi-layer light emitting structure further comprises a transparent conductive layer formed between the first conductivity type GaN layer and the second electrode.

### Claim 11 (depends on 8)

The semiconductor light emitting device of claim 8, wherein the first layer is a first conductivity type GaN layer, the multi-layer light emitting structure further comprising:
a substrate;
a second conductivity type GaN layer, the second conductivity type GaN layer being formed on the substrate;
an active layer, the active layer being formed on a first part of the surface of the second conductivity type GaN layer;
a first electrode, the first electrode being formed on a second part of the surface of the second conductivity type GaN layer; and
a second electrode, the second electrode being formed on a part of the surface of the first conductivity type GaN layer;
wherein the first conductivity type GaN layer is formed on the active layer.

### Claim 12 (depends on 8)

The semiconductor light emitting device of the claim 8, wherein the first layer is a transparent conductive layer, the multi-layer light emitting structure further comprising:
a substrate;
a second conductivity type GaN layer, the second conductivity type GaN layer being formed on the substrate;
an active layer, the active layer being formed on a first part of the surface of the second conductivity type GaN layer;
a first conductivity type GaN, the first conductivity type GaN layer being formed on the active layer;
a first electrode, the first electrode being formed on a second part of the surface of the second conductivity type GaN layer; and
a second electrode, the second electrode being formed on a part of the surface of the first conductivity type GaN layer;
wherein the transparent conductive layer is formed between the first conductivity type GaN layer and the second electrode.

### Claim 13 (depends on 8)

The semiconductor light emitting device of claim 8, wherein the heat conducting layer is a distributed Bragg reflector.