# US 7,745,832 B2 · Semiconductor light-emitting element assembly with a composite substrate > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,745,832 B2 - Document ID: US7745832B2 - Status: Granted - Kind: B2 - Application number: 11/222,803 - Filed: 2005-09-12 - Published: 2006-04-13 - Granted: 2010-06-29 - Earliest claimed: 2004-09-24 - Assignees: Epistar Corporation - Inventors: Min-Hsun Hsieh; Chou-Chih Yin; Chien-Yuan Wang; Jen-Shui Wang; Chia-Fen Tsai; Chia-Liang Hsu - Web page: https://patentgrep.com/patent/US7745832B2 ## CPC - H10H 20/8581: {characterised by their material} - H10H 20/8506: {Containers} - H10H 20/853: characterised by their shape - H10H 20/856: Reflecting means - H10W 72/884: {Die-attach connectors and bond wires} - H10W 74/00: Encapsulations, e.g. protective coatings - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A semiconductor light-emitting element assembly, comprising a composite substrate, a circuit layout carrier, a connecting structure, a recess, and a semiconductor light-emitting element, is disclosed. The connecting structure is used for bonding the composite substrate with the circuit layout carrier. The recess is formed by the circuit layout carrier and extends toward the composite substrate. The semiconductor light-emitting element is deposited in the recess and electrically connected to the circuit layout carrier. ## Claims ### Claim 1 A semiconductor light-emitting element assembly comprising: a composite substrate with a thermal expansion coefficient substantially smaller than or equal to 12×10−6/° C., and a thermal conductivity coefficient substantially greater than or equal to 150 W/mK; a circuit layout carrier; a connecting structure for bonding the composite substrate with the circuit layout carrier; a semiconductor light-emitting element disposed on one side of the composite substrate and electrically connected to the circuit layout carrier; and a recess formed on the circuit layout carrier and extending toward the composite substrate, wherein the semiconductor light-emitting element is deposited in the recess. ### Claim 2 (depends on 1) The semiconductor light-emitting element assembly of claim 1, wherein the composite material is selected from a group consisting of a metal matrix composite (MMC), a polymer matrix composite (PMC), ceramic matrix composite (CMC), and combinations thereof. ### Claim 3 (depends on 1) The semiconductor light-emitting element assembly of claim 1, wherein the difference between a thermal expansion coefficient of the semiconductor light-emitting element and the thermal expansion coefficient of the composite substrate is substantially smaller than or equal to 10×10−6/° C. ### Claim 4 (depends on 1) The semiconductor light-emitting element assembly of claim 1, wherein the circuit layout carrier is selected from a group consisting of a semiconductor substrate, a printed circuit board (PCB), a flexible printed circuit (FPC), a Si substrate, a ceramic substrate and an equivalent or combination thereof. ### Claim 5 (depends on 1) The semiconductor light-emitting element assembly of claim 1, wherein the composite substrate comprises a composite material that includes a fiber that is one of a carbon fiber and a ceramic fiber, and the composite material is formed by mixing the fiber with one of metals, polymers and ceramics. ### Claim 6 (depends on 1) The semiconductor light-emitting element assembly of claim 1, wherein the connecting structure comprises a flexible adhesive layer. ### Claim 7 (depends on 6) The semiconductor light-emitting element assembly of claim 6, wherein the flexible adhesive layer comprises a material selected from a group consisting of benzocyclobutene (BCB), epoxy, polyimide, SOG (Spin On Glass), silicone, solder, and an equivalent or combination thereof. ### Claim 8 (depends on 6) The semiconductor light-emitting element assembly of claim 6, wherein the connecting structure further comprises: a reaction layer formed on one side of the flexible adhesive layer. ### Claim 9 (depends on 8) The semiconductor light-emitting element assembly of claim 8, wherein the reaction layer comprises a material selected from the group consisting of silicon nitride (SiNx), epoxy, titanium (Ti), chromium (Cr), and an equivalent or combinations thereof. ### Claim 10 (depends on 1) The semiconductor light-emitting element assembly of claim 1, wherein the connecting structure comprises a plurality of metal layers connecting the semiconductor light-emitting element and the composite substrate by eutectic bonding. ### Claim 11 (depends on 1) The semiconductor light-emitting element assembly of claim 1, wherein the recess is formed in a tapered shape. ### Claim 12 (depends on 1) The semiconductor light-emitting element assembly of claim 1, wherein the recess contains a reflection layer. ### Claim 13 (depends on 1) The semiconductor light-emitting element assembly of claim 1, further comprising: a light pervious member covering the recess. ### Claim 14 (depends on 13) The semiconductor light-emitting element assembly of claim 13, further comprising: a wavelike array formed on the light pervious member and having a wavefront direction. ### Claim 15 (depends on 14) The semiconductor light-emitting element assembly of claim 14, wherein the semiconductor light-emitting element is substantially arranged in accordance with the wavefront direction. ### Claim 16 (depends on 13) The semiconductor light-emitting element assembly of claim 13, wherein the light pervious member is an optical lens. ### Claim 17 (depends on 13) The semiconductor light-emitting element assembly of claim 13, wherein the light pervious member comprises: a light-entering surface facing to the semiconductor light-emitting element; a recessed opening; and a wing-shaped protrusion part extending from the recessed opening and towards two opposite sides of the recessed opening. ### Claim 18 (depends on 17) The semiconductor light-emitting element assembly of claim 17, wherein the recessed opening has an apex pointing to the light-entering surface. ### Claim 19 (depends on 1) The semiconductor light-emitting element assembly of claim 1, further comprising: a wavelength-converting material disposed above the semiconductor light-emitting element for converting a wavelength of light. ### Claim 20 (depends on 19) The semiconductor light-emitting element assembly of claim 19, wherein the wavelength-converting material is selected from a group consisting of a fluorescent powder, a color filter, and an equivalent or combination thereof. ### Claim 21 A semiconductor light-emitting element assembly, comprising: a composite substrate with a thermal expansion coefficient substantially smaller than or equal to 12×10−6/° C., and a thermal conductivity coefficient substantially greater than or equal to 150 W/mK; a circuit layout carrier; a connecting structure for bonding the composite substrate with the circuit layout carrier; a semiconductor light-emitting element disposed on one side of the composite substrate and electrically connected to the circuit layout carrier; and a planarizing layer formed between the composite substrate and the connecting structure. ### Claim 22 (depends on 21) The semiconductor light-emitting element assembly of claim 21, wherein the planarizing layer comprises nickel (Ni) or a material adherable to the connecting structure. ### Claim 23 (depends on 1) The semiconductor light-emitting element assembly of claim 1, wherein the semiconductor light-emitting element is selected from a group consisting of a light-emitting diode (LED), a laser diode (LD), and an equivalent or combination thereof. ### Claim 24 (depends on 1) The semiconductor light-emitting element assembly of claim 1, wherein the semiconductor light-emitting element is in a flip-chip structure. ### Claim 25 (depends on 24) The semiconductor light-emitting element assembly of claim 24, further comprising an electrical contact forming on at least one portion of the surface of the recess and electrically connected to the semiconductor light-emitting element and the circuit layout carrier. ### Claim 26 (depends on 1) The semiconductor light-emitting element assembly of claim 1, further comprising: a convective heat transfer device connected to the composite substrate for cooling the composite substrate by heat convection. ### Claim 27 (depends on 26) The semiconductor light-emitting element assembly of claim 26, wherein the convective heat transfer device is selected from a group consisting of heat dissipation fins, porous ceramic material, porous composite material, and an equivalent or combination thereof. ### Claim 28 (depends on 1) The semiconductor light-emitting element assembly of claim 1, wherein the semiconductor light-emitting element is electrically connected to the composite substrate. ### Claim 29 (depends on 28) The semiconductor light-emitting element assembly of claim 28, wherein the semiconductor light-emitting element is electrically connected to a bottom electrical contact disposed on the other side the composite substrate. ### Claim 30 (depends on 28) The semiconductor light-emitting element assembly of claim 28, wherein the composite substrate is formed with a conductive through hole for electrically connecting to the semiconductor light-emitting element. ### Claim 31 (depends on 1) The semiconductor light-emitting element assembly of claim 1, wherein the semiconductor light-emitting element comprises: an ultraviolet (UV) light emitter; a wavelength-converting material being irradiated by the UV light emitter and emitting visible light. ### Claim 32 (depends on 31) The semiconductor light-emitting element assembly of claim 31, wherein the wavelength-converting material comprises europium(Eu)-activating alkaline earth silicate.