# US 7,745,828 B2 · Organic light emitting device and manufacturing method thereof

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- Number: US 7,745,828 B2
- Document ID: US7745828B2
- Status: Granted
- Kind: B2
- Application number: 11/982,169
- Filed: 2007-10-31
- Published: 2008-07-17
- Granted: 2010-06-29
- Earliest claimed: 2007-01-11
- Assignees: Samsung Electronics Co., Ltd.
- Inventors: Byoung-Seong Jeong; Kyu-Sik Cho; Joon-Hoo Choi; Yong-Hwan Park
- Web page: https://patentgrep.com/patent/US7745828B2

## CPC

- H10D 86/40: characterised by multiple TFTs
- H10D 30/6729: {characterised by the electrodes}
- H10D 30/6731: {Top-gate only TFTs}
- H10D 30/6737: {characterised by the electrode materials}
- H10D 30/6743: {Silicon}
- H10D 30/6746: {Amorphous silicon}
- H10D 86/471: {having different architectures, e.g. having both top-gate and bottom-gate TFTs}
- H10D 86/60: wherein the TFTs are in active matrices
- H10D 86/0223: {comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials}
- H10K 59/12: Active-matrix OLED [AMOLED] displays
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

An organic light emitting device includes a substrate, first and second ohmic contacts formed on the substrate, a driving semiconductor formed on the substrate and the first and second ohmic contacts and including polysilicon, a driving input electrode electrically connected to the first ohmic contact, a driving output electrode electrically connected to the second ohmic contact, a first gate insulating layer formed on the driving semiconductor, the driving input electrode, and the driving output electrode, and a driving control electrode formed on the first gate insulating layer and overlapping the driving semiconductor.

## Claims

### Claim 1

An organic light emitting device, comprising:
a substrate;
first and second spaced apart ohmic contacts formed on the substrate;
a driving semiconductor including polysilicon formed on the substrate, the driving semiconductor contacting the first and second ohmic contacts and the driving semiconductor disposed on the substrate and the first and second ohmic contacts;
a driving input electrode electrically connected to the first ohmic contact and disposed on the driving semiconductor and the first ohmic contact;
a driving output electrode electrically connected to the second ohmic contact and disposed on the driving semiconductor and the second ohmic contact;
a first gate insulating layer disposed on the driving semiconductor, the driving input electrode, and the driving output electrode; and
a driving control electrode disposed on the first gate insulating layer, wherein the driving control electrode overlaps the driving semiconductor.

### Claim 2 (depends on 1)

The organic light emitting device of claim 1, further comprising:
third and fourth spaced apart ohmic contacts formed on the substrate;
a switching semiconductor disposed on the third and fourth ohmic contacts;
a switching input electrode electrically connected to the third ohmic contact and disposed on the switching semiconductor and the third ohmic contact;
a switching output electrode electrically connected to the fourth ohmic contact and disposed on the switching semiconductor and the fourth ohmic contact; and
a control electrode disposed on the first gate insulating layer, wherein the control electrode overlaps the switching semiconductor, and further
wherein the switching output electrode is electrically connected to the driving control electrode.

### Claim 3 (depends on 1)

The organic light emitting device of claim 1, further comprising:
a switching control electrode disposed on the first gate insulating layer;
a second gate insulating layer disposed on the switching control electrode;
a switching semiconductor disposed on the second gate insulating layer and overlapping the switching control electrode;
third and fourth ohmic contacts disposed on the switching semiconductor;
a switching input electrode disposed on the third ohmic contact; and
a switching output electrode disposed on the fourth ohmic contact,
wherein the switching output electrode is electrically connected to the driving control electrode.

### Claim 4 (depends on 1)

The organic light emitting device of claim 1, further comprising:
a switching control electrode disposed on the substrate;
a switching semiconductor disposed on the first gate insulating layer and overlapping the switching control electrode;
third and fourth ohmic contacts disposed on the switching semiconductor;
a switching input electrode disposed on the third ohmic contact; and
a switching output electrode disposed on the fourth ohmic contact,
wherein the switching output electrode is electrically connected to the driving control electrode.

### Claim 5 (depends on 2)

The organic light emitting device of claim 2, wherein the switching semiconductor includes amorphous silicon or polysilicon.

### Claim 6 (depends on 1)

The organic light emitting device of claim 1, wherein the first and second ohmic contacts include polysilicon.

### Claim 7 (depends on 1)

The organic light emitting device of claim 1, wherein the first and second ohmic contacts have substantially the same planar shape as the driving input electrode and the driving output electrode.

### Claim 8 (depends on 1)

The organic light emitting device of claim 1, further comprising:
a passivation layer disposed on the driving output electrode and the driving input electrode;
a first electrode disposed on the passivation layer and connected to the driving output electrode;
a light emitting member disposed on the first electrode; and
a second electrode disposed on the light emitting member.

### Claim 9 (depends on 1)

The organic light emitting device of claim 1, further comprising an insulating layer disposed on the substrate.