# US 7,745,827 B2 · Memory device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,745,827 B2 - Document ID: US7745827B2 - Status: Granted - Kind: B2 - Application number: 11/525,950 - Filed: 2006-09-25 - Published: 2007-03-29 - Granted: 2010-06-29 - Earliest claimed: 2005-09-29 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Inventors: Yoshinobu Asami - Web page: https://patentgrep.com/patent/US7745827B2 ## CPC - H10D 86/60: wherein the TFTs are in active matrices - H10D 86/481: {integrated with passive devices, e.g. auxiliary capacitors} - H10D 86/0214: {using temporary substrates} - H10D 86/0231: {using masks, e.g. half-tone masks} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract Conventionally, the layer of the insulator between a cathode and an anode is formed by a droplet discharge method, vapor deposition, or the like separately from an interlayer insulating film formed over a thin film transistor, which creates problems of increase in cost and the number of manufacturing steps. A memory device of the present invention includes a first conductive film; an insulating film formed over the first conductive film; and a second conductive film formed over the insulating film, and an opening and a contact hole which are formed in the insulating film. Further, the insulating film exists between the first conductive film and the second conductive film formed in the opening, and the first conductive film and the second conductive film are electrically connected in the contact hole. ## Claims ### Claim 1 A memory device comprising: a first and second memory element portions each comprising: a first conductive film; an insulating film formed over the first conductive film, the insulating film having an opening; and a second conductive film formed over the insulating film and in the opening, wherein the insulating film exists between the first conductive film and the second conductive film formed in the opening, wherein a resistance value of the first and second memory element portions are different from each other, and wherein the first conductive film and the second conductive film in one of the first and second memory element portions are shorted. ### Claim 2 (depends on 1) The memory device according to claim 1, wherein the first conductive film is a source or drain wiring. ### Claim 3 (depends on 1) The memory device according to claim 1, wherein the first conductive film is a source or drain region. ### Claim 4 (depends on 1) The memory device according to claim 1, wherein the insulating film exists between the first conductive film and the second conductive film formed in a bottom of the opening. ### Claim 5 (depends on 1) The memory device according to claim 1, wherein the insulating film comprises an organic material. ### Claim 6 (depends on 1) The memory device according to claim 1, wherein the insulating film comprises a photosensitive material. ### Claim 7 A memory device comprising: a first and second memory element portions each comprising: a first conductive film; an insulating film formed over the first conductive film, the insulating film having an opening and a contact hole; and a second conductive film formed over the insulating film, in the opening and in the contact hole, wherein the insulating film exists between the first conductive film and the second conductive film formed in the opening, wherein the first conductive film and the second conductive film are electrically connected in the contact hole, and wherein a resistance value of the first and second memory element portions are different from each other. ### Claim 8 (depends on 7) The memory device according to claim 7, wherein the insulating film comprises an organic material. ### Claim 9 (depends on 7) The memory device according to claim 7, wherein the insulating film comprises a photosensitive material. ### Claim 10 (depends on 7) The memory device according to claim 7, wherein the first conductive film and the second conductive film in one of the first and second memory element portions are shorted in the opening. ### Claim 11 A memory device comprising: a first and second memory element portions each comprising: a thin film transistor formed over a substrate; a first insulating film formed over the thin film transistor; a first conductive film formed over the first insulating film; a second insulating film formed over the first conductive film, the second insulating film having an opening; and a second conductive film formed over the second insulating film and in the opening, wherein the second insulating film exists between the first conductive film and the second conductive film formed in the opening, wherein a resistance value of the first and second memory element portions are different from each other, and wherein the first conductive film and the second conductive film in one of the first and second memory element portions are shorted. ### Claim 12 (depends on 3) The memory device according to claim 3, wherein the second insulating film comprises an organic material. ### Claim 13 (depends on 11) The memory device according to claim 11, wherein the second insulating film comprises a photosensitive material. ### Claim 14 A memory device comprising: a first and second memory element portions each comprising: a thin film transistor formed over a substrate; a first insulating film formed over the thin film transistor; a first conductive film formed over the first insulating film; a second insulating film formed over the first conductive film, the second insulating film having an opening and a contact hole; and a second conductive film formed over the second insulating film, in the opening and in the contact hole, wherein the second insulating film exists between the first conductive film and the second conductive film formed in the opening, wherein a resistance value of the first and second memory element portions are different from each other, and wherein the first conductive film and the second conductive film are electrically connected in the contact hole. ### Claim 15 (depends on 14) The memory device according to claim 14, wherein the second insulating film comprises an organic material. ### Claim 16 (depends on 14) The memory device according to claim 14, wherein the second insulating film comprises a photosensitive material. ### Claim 17 (depends on 14) The memory device according to claim 14, wherein the first conductive film and the second conductive film in one of the first and second memory element portions are shorted in the opening. ### Claim 18 A memory device comprising: a base insulating film formed over a substrate; a semiconductor film having at least a first impurity region and a second impurity region formed over the base insulating film; a gate insulating film formed over the semiconductor film; a gate electrode formed over the gate insulating film; an insulating film formed over the gate electrode; a first conductive film formed over the insulating film and an opening formed in the insulating film; and a second conductive film formed over the insulating film and a contact hole formed in the insulating film, wherein the insulating film exists between the first impurity region and the first conductive film formed in the opening, and wherein the second impurity region and the second conductive film are electrically connected in the contact hole. ### Claim 19 A memory device comprising: a first and second memory element portions each comprising: a first conductive film; an insulating film formed over the first conductive film, the insulating film having an opening; and a second conductive film formed over the insulating film and in the opening, wherein the insulating film exists between the first conductive film and the second conductive film formed in the opening, wherein the first conductive film and the second conductive film in one of the first and second memory element portions are shorted in the opening. ### Claim 20 (depends on 19) The memory device according to claim 19, wherein the insulating film comprises an organic material. ### Claim 21 (depends on 19) The memory device according to claim 19, wherein the insulating film comprises a photosensitive material.