# US 7,745,825 B2 · Pixel structure and method for forming the same

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- Number: US 7,745,825 B2
- Document ID: US7745825B2
- Status: Granted
- Kind: B2
- Application number: 11/902,229
- Filed: 2007-09-20
- Published: 2008-10-09
- Granted: 2010-06-29
- Earliest claimed: 2007-04-03
- Assignees: Au Optronics Corporation
- Inventors: Yu-Hsin Ting
- Web page: https://patentgrep.com/patent/US7745825B2

## CPC

- G02F 1/136213: {Storage capacitors associated with the pixel electrode}
- H10D 86/441: {Interconnections, e.g. scanning lines}
- H10D 86/481: {integrated with passive devices, e.g. auxiliary capacitors}
- H10D 86/60: wherein the TFTs are in active matrices
- G02F 1/136227: {Through-hole connection of the pixel electrode to the active element through an insulation layer}
- H10K 59/1216: {the pixel elements being capacitors}
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

A pixel structure comprising at least one transistor, a first storage capacitor, a first conductive layer, an interlayer dielectric layer, a second conductive layer, a passivation layer, and a third conductive layer is provided. The first storage capacitor is electrically connected to the transistor. The interlayer dielectric layer having at least one first opening covers the first conductive layer. The second conductive layer is formed on a part of the interlayer dielectric layer and is electrically connected to the first conductive layer through the first opening. The passivation layer having at least one second opening covers the transistor and the second conductive layer. The third conductive layer is formed on a part of the passivation layer and is electrically connected to the transistor through the second opening. The first storage capacitor is formed by the third conductive layer, the passivation layer, and the second conductive layer.

## Claims

### Claim 1

A pixel structure, comprising:
at least one transistor;
a first storage capacitor electrically connected to the transistor;
a first conductive layer;
an interlayer dielectric layer, covering the first conductive layer, and having at least one first opening;
a second conductive layer, formed on a part of the interlayer dielectric layer, and electrically connected to the first conductive layer through the first opening;
a passivation layer, covering the transistor and the second conductive layer, and having at least one second opening
a third conductive layer, formed on a part of the passivation layer, and electrically connected to the first conductive layer through the first opening; and
a fourth conductive layer covering the second conductive layer and a part of the interlayer dielectric layer, such that the first storage capacitor is formed by the third conductive layer, the passivation layer, the fourth conductive layer, and the second conductive layer.

### Claim 2 (depends on 1)

The pixel structure according to claim 1, further comprising:
a semiconductor layer; and
an insulating layer, covering the semiconductor layer, and having at least two third openings.

### Claim 3 (depends on 2)

The pixel structure according to claim 2, further comprising:
a second storage capacitor formed by the first conductive layer, the insulating layer, and a part of the semiconductor layer.

### Claim 4 (depends on 3)

The pixel structure according to claim 3, further comprising:
a third storage capacitor formed by the second conductive layer, the fourth conductive layer, the interlayer dielectric layer, the insulating layer, and the part of the semiconductor layer.

### Claim 5 (depends on 1)

The pixel structure according to claim 1, wherein the first conductive layer, the second conductive layer, and the fourth conductive layer have substantially identical potential.

### Claim 6 (depends on 1)

The pixel structure according to claim 1, wherein potential of the first conductive layer, the second conductive layer, and the fourth conductive layer is common potential.

### Claim 7 (depends on 1)

The pixel structure according to claim 1, further comprising:
a semiconductor layer; and
an insulating layer, covering the semiconductor layer, and having at least two third openings.

### Claim 8 (depends on 7)

The pixel structure according to claim 7, further comprising:
a second storage capacitor formed by the first conductive layer, the insulating layer, and a part of the semiconductor layer.

### Claim 9 (depends on 8)

The pixel structure according to claim 8, further comprising:
a third storage capacitor formed by the second conductive layer, the interlayer dielectric layer, the insulating layer, and the part of the semiconductor layer.

### Claim 10 (depends on 1)

The pixel structure according to claim 1, wherein the first conductive layer is connected to a common electrode line.

### Claim 11 (depends on 1)

A display panel incorporating a plurality of pixel structures of claim 1.

### Claim 12 (depends on 11)

An electro-optical device incorporating the display panel of claim 11.