# US 7,745,813 B2 · Nanostructures and methods for manufacturing the same

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- Number: US 7,745,813 B2
- Document ID: US7745813B2
- Status: Granted
- Kind: B2
- Application number: 12/003,739
- Filed: 2007-12-31
- Published: 2008-06-19
- Granted: 2010-06-29
- Earliest claimed: 2002-07-08
- Assignees: QuNano AB
- Inventors: Lars Ivar Samuelson; Bjorn Jonas Ohlsson
- Web page: https://patentgrep.com/patent/US7745813B2

## CPC

- H10F 77/1437: {Quantum wires or nanorods}
- C30B 11/00: Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method (C30B13/00, C30B15/00, C30B17/00, C30B19/00 take precedence; under a protective fluid C30B27/00)
- C30B 11/12: Vaporous components, e.g. vapour-liquid-solid-growth
- C30B 25/00: Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B 25/02: Epitaxial-layer growth
- C30B 25/14: Feed and outlet means for the gases; Modifying the flow of the reactive gases
- C30B 25/18: characterised by the substrate
- C30B 25/183: {being provided with a buffer layer, e.g. a lattice matching layer}
- C30B 29/403: {AIII-nitrides}
- C30B 29/406: {Gallium nitride}
- C30B 29/605: {Products containing multiple oriented crystallites, e.g. columnar crystallites}
- H10D 8/755: {Resonant tunneling diodes [RTD]}
- H10D 10/021: {of heterojunction BJTs [HBT]}
- H10D 10/821: {Vertical heterojunction BJTs}
- H10D 62/118: {Nanostructure semiconductor bodies}
- H10D 62/121: {oriented parallel to substrates}
- H10D 62/123: {comprising junctions}
- H10D 62/85: being Group III-V materials, e.g. GaAs
- H10F 10/14: Photovoltaic cells having only PN homojunction potential barriers
- H10F 19/80: Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
- H10H 20/811: having quantum effect structures or superlattices, e.g. tunnel junctions
- Y02E 10/547: Monocrystalline silicon PV cells
- Y10S 977/762: Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
- Y10S 977/763: formed along or from crystallographic terraces or ridges
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps.

## Claims

### Claim 1

A layered structure comprising:
a single crystal, epitaxial layer of a second crystalline material grown on a surface of a substrate of a first crystalline material, the second crystalline material being different from the first crystalline material;
wherein:
a plurality of nanowhiskers of the second crystalline material extend from the surface of the substrate in the epitaxial layer of the second crystalline material;
the plurality of nanowhiskers constitute nucleation sites for the epitaxial layer of the second crystalline material;
the entire epitaxial layer of the second crystalline material contains substantially no misfit dislocations, grain boundaries or antiphase domains;
the plurality of nanowhiskers and the epitaxial layer of the second crystalline material comprise a same III-V semiconductor material;
the surface of the substrate of the first crystalline material comprises silicon;
the substrate comprises a crystalline silicon (100) substrate; and
the surface of the substrate comprises a (111) silicon surface exposed in V-shaped grooves in the substrate.

### Claim 2 (depends on 1)

A structure according to claim 1, wherein the plurality of nanowhiskers extend in a <111> direction from the (111) silicon surface in the V-shaped grooves.

### Claim 3

A layered structure comprising:
a single crystal, epitaxial layer of a second crystalline material grown on a surface of a substrate of a first crystalline material, the second crystalline material being different from the first crystalline material;
wherein:
a plurality of nanowhiskers of the second crystalline material extend from the surface of the substrate in the epitaxial layer of the second crystalline material;
the plurality of nanowhiskers constitute nucleation sites for the epitaxial layer of the second crystalline material;
the entire epitaxial layer of the second crystalline material contains substantially no misfit dislocations, grain boundaries or antiphase domains;
the plurality of nanowhiskers and the epitaxial layer of the second crystalline material comprise a same III-V semiconductor material;
the substrate of the first crystalline material comprises a crystalline silicon substrate;
the substrate comprises a crystalline silicon (100) substrate; and
the surface of the substrate comprises a (111) silicon surface exposed in V-shaped grooves in the substrate.

### Claim 4 (depends on 3)

A structure according to claim 3, wherein the plurality of nanowhiskers extend in a <111> direction from the (111) silicon surface in the V-shaped grooves.

### Claim 5

A structure comprising a plurality of crystalline III-V semiconductor nanowhiskers grown on a surface of a silicon substrate, wherein each entire nanowhisker of the plurality of nanowhiskers contains no misfit dislocations or antiphase domains,
wherein:
the substrate comprises a crystalline silicon (100) substrate; and
the surface of the substrate comprises a (111) silicon surface exposed in V-shaped grooves in the substrate.

### Claim 6 (depends on 5)

A structure according to claim 5, wherein the plurality of nanowhiskers extend in a <111> direction from the (111) silicon surface in the V-shaped grooves.

### Claim 7 (depends on 6)

A structure according to claim 6, wherein the plurality of nanowhiskers extend primarily in a <111> B direction from the (111) silicon surface in the V-shaped grooves.

### Claim 8 (depends on 5)

A structure according to claim 5, wherein the plurality of nanowhiskers which extend from the (111) silicon surface in the V-shaped grooves extend primarily from two opposing surfaces of the V-shaped grooves.

### Claim 9 (depends on 2)

A structure according to claim 2, wherein the plurality of nanowhiskers extend primarily in a <111> B direction from the (111) silicon surface in the V-shaped grooves.

### Claim 10 (depends on 1)

A structure according to claim 1, wherein the plurality of nanowhiskers which extend from the (111) silicon surface in the V-shaped grooves extend primarily from two opposing surfaces of the V-shaped grooves.