# US 7,745,724 B2 · Photovoltaic cells integrated with bypass diode

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- Number: US 7,745,724 B2
- Document ID: US7745724B2
- Status: Granted
- Kind: B2
- Application number: 11/515,418
- Filed: 2006-09-01
- Published: 2007-04-26
- Granted: 2010-06-29
- Earliest claimed: 2005-09-01
- Assignees: Konarka Technologies, Inc.
- Inventors: Srini Balasubramanian; Howard Berke; Kevin Coakley; Markus Scharber
- Web page: https://patentgrep.com/patent/US7745724B2

## CPC

- H01G 9/2068: {Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells}
- B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
- H10F 19/75: the bypass diodes being integrated or directly associated with the photovoltaic cells, e.g. formed in or on the same substrate
- H10K 39/10: Organic photovoltaic [PV] modules; Arrays of single organic PV cells
- H01G 9/2063: {comprising a mixture of two or more dyes}
- H10K 30/30: comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
- H10K 85/113: {Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene}
- H10K 85/215: {comprising substituents, e.g. PCBM}
- Y02E 10/542: Dye sensitized solar cells
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10)
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

Photovoltaic cells integrated with a bypass diode, as well as related systems, components, and methods, are disclosed.

## Claims

### Claim 1

A system, comprising:
a photovoltaic cell comprising first and second electrodes, a first hole carrier layer, a first hole blocking layer, and a photoactive layer between the first hole carrier layer and the first hole blocking layer the photoactive layer comprising an organic material; and
a diode comprising third and fourth electrodes, a second hole carrier layer and a second hole blocking layer;
wherein the photoactive layer is also between the second hole carrier layer and the second hole blocking layer, the photoactive layer comprises a semiconductor material, the first hole carrier layer is electrically connected with the second hole blocking layer, and the second hole carrier layer is electrically connected with the first hole blocking layer.

### Claim 2 (depends on 1)

The system of claim 1, wherein the diode is so configured that, when the photovoltaic cell is exposed to light, the diode is not exposed to light.

### Claim 3 (depends on 1)

The system of claim 1, wherein the first hole carrier layer is electrically connected with the second hole blocking layer via an electrode.

### Claim 4 (depends on 1)

The system of claim 1, wherein the second hole carrier layer is electrically connected with the first hole blocking layer via an electrode.

### Claim 5 (depends on 1)

The system of claim 1, wherein the semiconductor material comprises an electron donor material and an electron acceptor material.

### Claim 6 (depends on 5)

The system of claim 5, wherein the electron donor material comprises a material selected from the group consisting of discotic liquid crystals, polythiophenes, polyphenylenes, polyphenylvinylenes, polysilanes, polythienylvinylenes, and polyisothianaphthalenes.

### Claim 7 (depends on 6)

The system of claim 6, wherein the electron donor material comprises poly(3-hexylthiophene).

### Claim 8 (depends on 5)

The system of claim 5, wherein the electron acceptor material comprises a material selected from the group consisting of fullerenes, inorganic nanoparticles, oxadiazoles, discotic liquid crystals, carbon nanorods, inorganic nanorods, polymers containing CN groups, polymers containing CF3 groups, and combinations thereof.

### Claim 9 (depends on 8)

The system of claim 8, wherein the electron acceptor material comprises a substituted fullerene.

### Claim 10 (depends on 1)

The system of claim 1, wherein the first or second hole carrier layer comprises a material selected from the group consisting of polythiophenes, polyanilines, polyvinylcarbazoles, polyphenylenes, polyphenylvinylenes, polysilanes, polythienylenevinylenes, polyisothianaphthanenes, and combinations thereof.

### Claim 11 (depends on 1)

The system of claim 1, wherein the first or second hole blocking layer comprises a material selected from the group consisting of LiF, metal oxides and combinations thereof.

### Claim 12 (depends on 1)

The system of claim 1, wherein the photovoltaic cell is an organic photovoltaic cell.

### Claim 13 (depends on 1)

The system of claim 1, wherein the first hole carrier layer is in contact with the first electrode, the first hole blocking layer is in contact with the second electrode, the second hole carrier layer is in contact with the third electrode, the second hole blocking layer is in contact with the fourth electrode, the first electrode is electrically connected with the fourth electrode, and the second electrode is electrically connected with the third electrode.

### Claim 14 (depends on 13)

The system of claim 13, wherein the first and fourth electrodes are one electrode.

### Claim 15 (depends on 13)

The system of claim 13, wherein the second and third electrodes are one electrode.

### Claim 16

A system, comprising:
a photovoltaic cell comprising a first hole carrier layer, a first hole blocking layer, and a photoactive layer between the first hole carrier layer and the first hole blocking layer, the photoactive layer comprising an organic material; and
a diode comprising a second hole carrier layer and a second hole blocking layer;
wherein the photoactive layer is also between the second hole carrier layer and the second hole blocking layer, the photoactive layer comprises a semiconductor material, the first hole carrier layer is electrically connected with the second hole blocking layer via a first common electrode, and the second hole carrier layer is electrically connected with the first hole blocking layer via a second common electrode.