# US 7,745,350 B2 · Impurity control in HDP-CVD DEP/ETCH/DEP processes

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- Number: US 7,745,350 B2
- Document ID: US7745350B2
- Status: Granted
- Kind: B2
- Application number: 12/204,523
- Filed: 2008-09-04
- Published: 2009-03-12
- Granted: 2010-06-29
- Earliest claimed: 2007-09-07
- Assignees: Applied Materials, Inc.
- Inventors: Anchuan Wang; Young S. Lee; Manoj Vellaikal; Jason Thomas Bloking; Jin Ho Jeon; Hemant P. Mungekar
- Web page: https://patentgrep.com/patent/US7745350B2

## CPC

- C23C 16/045: {Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates}
- C23C 16/4408: {by purging residual gases from the reaction chamber or gas lines}
- H10P 50/283: {by chemical means}
- H10W 10/0143: {comprising concurrently refilling multiple trenches having different shapes or dimensions}
- H10W 10/17: formed using trench refilling with dielectric materials, e.g. shallow trench isolations
- H10P 14/6336: {in the presence of a plasma [PECVD]}
- H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD}
- H10P 14/69215: {the material being a silicon oxide, e.g. SiO2}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Methods are disclosed of depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A first portion of the silicon oxide film is deposited over the substrate and within the gap using a high-density plasma process. Thereafter, a portion of the deposited first portion of the silicon oxide film is etched back. This includes flowing a halogen precursor through a first conduit from a halogen-precursor source to the substrate processing chamber, forming a high-density plasma from the halogen precursor, and terminating flowing the halogen precursor after the portion has been etched back. Thereafter, a halogen scavenger is flowed to the substrate processing chamber to react with residual halogen in the substrate processing chamber. Thereafter, a second portion of the silicon oxide film is deposited over the first portion of the silicon oxide film and within the gap using a high-density plasma process.

## Claims

### Claim 1

A method of depositing a silicon oxide film on a substrate disposed in a substrate processing chamber, the substrate having a gap formed between adjacent raised surfaces, the method comprising:
depositing a first portion of the silicon oxide film over the substrate and within the gap using a high-density plasma process;
thereafter, etching back a portion of the deposited first portion of the silicon oxide film, wherein etching back the portion comprises:
flowing a halogen precursor through a first conduit from a halogen-precursor source to the substrate processing chamber;
forming a high-density plasma from the halogen precursor by inductively coupling a source radio-frequency power into the substrate processing chamber, the source radio-frequency power providing a power density on the substrate between 85,000 and 140,000 W/m2; and
terminating flowing the halogen precursor after the portion has been etched back;
thereafter, flowing a halogen scavenger to the substrate processing chamber to react with residual halogen in the substrate processing chamber; and
thereafter, depositing a second portion of the silicon oxide film over the first portion of the silicon oxide film and within the gap using a high-density plasma process.

### Claim 2 (depends on 1)

The method recited in claim 1 wherein the halogen precursor comprises a fluorine precursor and the halogen scavenger comprises O2.

### Claim 3 (depends on 1)

The method recited in claim 1 further comprising flushing the first conduit with a flow of a first gas nonreactive with the halogen precursor.

### Claim 4 (depends on 3)

The method recited in claim 3 wherein the first gas nonreactive with the halogen precursor comprises Ar.

### Claim 5 (depends on 3)

The method recited in claim 3 wherein the first gas nonreactive with the halogen precursor comprises He.

### Claim 6 (depends on 3)

The method recited in claim 3 further comprising flowing a second gas nonreactive with the halogen precursor through a second conduit to the substrate processing chamber different from the first conduit.

### Claim 7 (depends on 6)

The method recited in claim 6 wherein the second gas nonreactive with the halogen precursor comprises He.

### Claim 8 (depends on 1)

The method recited in claim 1 wherein depositing the first portion of the silicon oxide film comprises:
flowing a silicon-containing gas into the substrate processing chamber;
flowing an oxygen-containing gas into the substrate processing chamber;
flowing a fluent gas into the substrate processing chamber;
forming a first high-density plasma from the silicon-containing gas, the oxygen-containing gas, and the fluent gas;
depositing the first portion of the silicon oxide film using the first high-density plasma at a deposition rate between 900 and 6000 Å/min and with a deposition/sputter ratio greater than 20, wherein the deposition/sputter ratio is defined as a ratio of a net deposition rate and a blanket sputtering rate to the blanket sputtering rate.

### Claim 9 (depends on 8)

The method recited in claim 8 wherein the silicon-containing gas comprises SiH4 and the oxygen-containing gas comprises O2.

### Claim 10 (depends on 1)

The method recited in claim 1 wherein:
the source radio-frequency power is provided by sources disposed at a top of the substrate processing chamber and at a side of the substrate processing chamber; and
the power provided by the source disposed at the side of the substrate processing chamber is greater than the power provided by the source disposed at the top of the substrate processing chamber.

### Claim 11 (depends on 1)

The method recited in claim 1 wherein the power provided by the source disposed at the side of the substrate processing chamber is at least three times the power provided by the source disposed at the top of the substrate processing chamber.

### Claim 12 (depends on 1)

The method recited in claim 1 further comprising:
etching back a portion of the deposited second portion of the silicon oxide film, wherein etching back the portion comprises:
flowing a halogen precursor through the first conduit from the halogen-precursor source to the substrate processing chamber;
forming a high-density plasma from the halogen precursor; and
terminating flowing the halogen precursor after the portion has been etched back;
thereafter, flowing the halogen scavenger to the substrate processing chamber to react with residual halogen in the substrate processing chamber; and
thereafter, depositing a third portion of the silicon oxide film over the second portion of the silicon oxide film and within the gap using a high-density plasma process.