# US 7,745,322 B2 · Wire bond interconnection

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 7,745,322 B2
- Document ID: US7745322B2
- Status: Granted
- Kind: B2
- Application number: 12/032,159
- Filed: 2008-02-15
- Published: 2008-06-12
- Granted: 2010-06-29
- Earliest claimed: 2004-11-12
- Assignees: ChipPAC, Inc.
- Inventors: Hun-Teak Lee; Jong-Kook Kim; Chul-Sik Kim; Ki-Youn Jang; Rajendra D. Pendse
- Web page: https://patentgrep.com/patent/US7745322B2

## CPC

- H10W 70/465: {Bumps or wires}
- H10W 70/68: Shapes or dispositions thereof
- H10W 72/90: Bond pads, in general
- H10W 90/401: {characterised by multiple insulating or insulated package substrates, interposers or RDLs}
- H10W 70/682: {comprising holes having chips therein}
- H10W 70/685: comprising multiple insulating layers
- H10W 72/07141: {Means for applying energy, e.g. ovens or lasers}
- H10W 72/073: {of die-attach connectors}
- H10W 72/075: {of bond wires}
- H10W 72/07511: {Treating the bonding area before connecting, e.g. by applying flux or cleaning}
- H10W 72/07533: {Ultrasonic bonding, e.g. thermosonic bonding}
- H10W 72/07552: {changes in structures or sizes}
- H10W 72/07554: {changes in dispositions}
- H10W 72/521: {Structures or relative sizes of bond wires}
- H10W 72/536: {the connected ends being ball-shaped}
- H10W 72/5363: {the connected ends being wedge-shaped}
- H10W 72/5366: {the bond wires having kinks}
- H10W 72/5434: {the connected ends being on auxiliary connecting means on bond pads, e.g. on other bond wires}
- H10W 72/5445: {being orthogonal to a side surface of the chip, e.g. parallel arrangements}
- H10W 72/547: {Dispositions of multiple bond wires}
- H10W 72/5522: {comprising gold [Au]}
- H10W 72/5524: {comprising aluminium [Al]}
- H10W 72/59: Bond pads specially adapted therefor
- H10W 72/884: {Die-attach connectors and bond wires}
- H10W 72/932: {Plan-view shape, i.e. in top view}
- H10W 72/934: {Cross-sectional shape, i.e. in side view}
- H10W 72/951: {Materials of bond pads}
- H10W 72/952: {comprising metals or metalloids, e.g. PbSn, Ag or Cu}
- H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 99/00: Subject matter not provided for in other groups of this subclass
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A wire bond interconnection between a die pad and a bond finger includes a support pedestal at a bond site of the lead finger, a ball bond on the die pad, and a stitch bond on the support pedestal, in which a width of the lead finger at the bond site is less than a diameter of the support pedestal. Also, a semiconductor package including a die mounted onto and electrically connected by a plurality of wire bonds to a substrate, in which each of the wire bonds includes a wire ball bonded to a pad on the die and stitch bonded to a support pedestal on a bond site on a lead finger, and in which the width of the lead finger at the bond site is less than the diameter of the support pedestal.

## Claims

### Claim 1

A method for forming a wire bond interconnection between a semiconductor die and a substrate, comprising providing a die affixed on a die mount portion of a first side of a substrate and oriented with the active side away from the substrate, the substrate having patterned traces including lead fingers in the first side of the substrate; forming a support pedestal on a bond site of a lead finger, and the width of the bond site is less than the width of the support pedestal; forming a first bond on a die pad; and forming a second bond on the support pedestal.

### Claim 2 (depends on 1)

The method of claim 1 wherein the first bond comprises a ball bond.

### Claim 3 (depends on 1)

The method of claim 1 wherein the second bond is a stitch bond.

### Claim 4 (depends on 1)

The method of claim 1 wherein forming the support pedestal comprises using a wire bonding tool as in formation of a stud bump.

### Claim 5 (depends on 4)

The method of claim 4 wherein the support pedestal is metallurgically bonded to the lead finger.

### Claim 6 (depends on 1)

The method of claim 1 wherein the support pedestal is formed in a stud bumping operation.

### Claim 7 (depends on 1)

The method of claim 1 wherein the support pedestal comprises gold.

### Claim 8 (depends on 1)

The method of claim 1 wherein the lead finger comprises copper.