# US 7,745,312 B2 · Selective germanium deposition for pillar devices

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- Number: US 7,745,312 B2
- Document ID: US7745312B2
- Status: Granted
- Kind: B2
- Application number: 12/007,780
- Filed: 2008-01-15
- Published: 2009-07-16
- Granted: 2010-06-29
- Earliest claimed: 2008-01-15
- Assignees: SanDisk 3D LLC
- Inventors: S. Brad Herner; Christopher J. Petti
- Web page: https://patentgrep.com/patent/US7745312B2

## CPC

- H10D 8/50: PIN diodes
- H10B 20/25: One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

A method of making a pillar device includes providing an insulating layer having an opening, and selectively depositing germanium or germanium rich silicon germanium semiconductor material into the opening to form the pillar device.

## Claims

### Claim 1

A method of making a pillar device, comprising:
providing an insulating layer having an opening, wherein titanium nitride, titanium tungsten or tungsten nitride is exposed in the opening in the insulating layer; and
selectively depositing germanium or germanium rich silicon germanium semiconductor material into the opening to form the pillar device.

### Claim 2 (depends on 1)

The method of claim 1, further comprising depositing a silicon seed layer on the titanium nitride, titanium tungsten or tungsten nitride.

### Claim 3 (depends on 2)

The method of claim 2, wherein the silicon seed layer is deposited by chemical vapor deposition at a temperature below 440° C.

### Claim 4 (depends on 2)

The method of claim 2, wherein the semiconductor material is selectively deposited on the seed layer.

### Claim 5 (depends on 4)

The method of claim 4, the semiconductor material is selectively deposited by chemical vapor deposition at a temperature below 440° C.

### Claim 6 (depends on 1)

The method of claim 1, further comprising:
forming the titanium nitride, titanium tungsten or tungsten nitride pattern over a substrate;
forming an insulating layer on the titanium nitride, titanium tungsten or tungsten nitride pattern; and
forming the opening in the insulating layer to expose the titanium nitride, titanium tungsten or tungsten nitride pattern.

### Claim 7 (depends on 1)

The method of claim 1, further comprising:
forming the insulating layer over a substrate;
forming the opening in the insulating layer; and
selectively forming a titanium nitride, titanium tungsten, or tungsten nitride pattern in the opening.

### Claim 8

A method of making a pillar diode, comprising:
forming a titanium nitride pattern over a substrate; and
forming an insulating layer on the titanium nitride pattern;
forming an opening in insulating layer to expose the titanium nitride pattern;
forming a silicon seed layer in the opening on the titanium nitride pattern;
selectively depositing a first conductivity type germanium or germanium rich silicon germanium semiconductor material on the silicon seed layer in the opening;
selectively depositing intrinsic germanium or germanium rich silicon germanium semiconductor material on the first conductivity type germanium or germanium rich silicon germanium semiconductor material; and
implanting second conductivity type dopant into an upper portion of the intrinsic first conductivity type germanium or germanium rich silicon germanium semiconductor material semiconductor material to form a p-i-n diode.

### Claim 9 (depends on 8)

The method of claim 8, wherein the semiconductor material is germanium.

### Claim 10 (depends on 8)

The method of claim 8, wherein the semiconductor material is germanium rich silicon germanium.

### Claim 11 (depends on 8)

The method of claim 8, further comprising forming an antifuse dielectric layer on the diode or under the diode.

### Claim 12 (depends on 1)

The method of claim 1, wherein the semiconductor material is germanium.

### Claim 13 (depends on 1)

The method of claim 1, wherein the semiconductor material is germanium rich silicon germanium.

### Claim 14 (depends on 1)

The method of claim 1, wherein the pillar device comprises a diode.

### Claim 15 (depends on 14)

The method of claim 14, wherein the step of selectively depositing germanium or germanium rich silicon germanium semiconductor material into the opening comprises selectively depositing a first conductivity type germanium or germanium rich silicon germanium semiconductor material.

### Claim 16 (depends on 15)

The method of claim 15, further comprising:
selectively depositing intrinsic germanium or germanium rich silicon germanium semiconductor material into the opening on the first conductivity type material; and
implanting second conductivity type dopants into an upper portion of the intrinsic germanium or germanium rich silicon germanium semiconductor material to form a p-i-n diode.

### Claim 17 (depends on 15)

The method of claim 15, further comprising:
selectively depositing intrinsic germanium or germanium rich silicon germanium semiconductor material into the opening on the first conductivity type semiconductor material; and
selectively depositing a second conductivity type germanium or germanium rich silicon germanium semiconductor material in the opening on the intrinsic germanium or germanium rich silicon germanium semiconductor material to form a p-i-n diode.

### Claim 18 (depends on 14)

The method of claim 14, further comprising forming an antifuse dielectric layer on diode or under the diode.

### Claim 19 (depends on 14)

The method of claim 14, wherein the pillar device is a nonvolatile memory device.

### Claim 20

A method of making a pillar device, comprising:
forming an insulating layer over a substrate;
patterning the insulating layer to form an opening in the insulating layer;
forming a titanium nitride, titanium tungsten or tungsten nitride pattern over the substrate, prior to the step of forming the insulating layer, wherein the titanium nitride, titanium tungsten or tungsten nitride pattern is exposed in the opening; and
selectively depositing germanium or germanium rich silicon germanium semiconductor material into the opening to form the pillar device.

### Claim 21 (depends on 20)

The method of claim 20, wherein the semiconductor material is germanium.

### Claim 22 (depends on 20)

The method of claim 20, wherein the semiconductor material is germanium rich silicon germanium.

### Claim 23 (depends on 20)

The method of claim 20, wherein the pillar device comprises a diode.

### Claim 24 (depends on 23)

The method of claim 23, wherein the step of selectively depositing germanium or germanium rich silicon germanium semiconductor material into the opening comprises selectively depositing a first conductivity type germanium or germanium rich silicon germanium semiconductor material.

### Claim 25 (depends on 24)

The method of claim 24, further comprising:
selectively depositing intrinsic germanium or germanium rich silicon germanium semiconductor material into the opening on the first conductivity type material; and
implanting second conductivity type dopants into an upper portion of the intrinsic germanium or germanium rich silicon germanium semiconductor material to form a p-i-n diode.

### Claim 26 (depends on 24)

The method of claim 24, further comprising:
selectively depositing intrinsic germanium or germanium rich silicon germanium semiconductor material into the opening on the first conductivity type semiconductor material; and
selectively depositing a second conductivity type germanium or germanium rich silicon germanium semiconductor material in the opening on the intrinsic germanium or germanium rich silicon germanium semiconductor material to form a p-i-n diode.

### Claim 27 (depends on 23)

The method of claim 23, further comprising forming an antifuse dielectric layer on diode or under the diode.

### Claim 28 (depends on 23)

The method of claim 23, wherein the pillar device is a nonvolatile memory device.

### Claim 29 (depends on 20)

The method of claim 20, further comprising depositing a silicon seed layer on the substrate.

### Claim 30 (depends on 29)

The method of claim 29, wherein the silicon seed layer is deposited by chemical vapor deposition at a temperature below 440° C.

### Claim 31 (depends on 29)

The method of claim 29, wherein the semiconductor material is selectively deposited on the seed layer.

### Claim 32 (depends on 31)

The method of claim 31, the semiconductor material is selectively deposited by chemical vapor deposition at a temperature below 440° C.

### Claim 33

A method of making a pillar device, comprising:
forming an insulating layer over a substrate;
patterning the insulating layer to form an opening in the insulating layer and expose the substrate in the opening;
selectively forming a titanium nitride, titanium tungsten, or tungsten nitride pattern in the opening, prior to a step of selectively depositing germanium or germanium rich silicon germanium semiconductor material; and
selectively depositing the germanium or germanium rich silicon germanium semiconductor material into the opening to form the pillar device.