# US 7,745,310 B2 · Method of manufacturing semiconductor device

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- Number: US 7,745,310 B2
- Document ID: US7745310B2
- Status: Granted
- Kind: B2
- Application number: 12/216,622
- Filed: 2008-07-08
- Published: 2009-01-15
- Granted: 2010-06-29
- Earliest claimed: 2007-07-09
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Inventors: Akihisa Shimomura; Tatsuya Mizoi; Hidekazu Miyairi; Koichiro Tanaka
- Web page: https://patentgrep.com/patent/US7745310B2

## CPC

- H10D 86/0214: {using temporary substrates}
- H10D 86/40: characterised by multiple TFTs
- H10D 86/60: wherein the TFTs are in active matrices
- H10P 52/00: Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P 90/00: Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P 90/1902: {Preparing horizontally inhomogeneous wafers}
- H10P 90/1916: {with separation or delamination along an ion implanted layer, e.g. Smart-cut}
- H10W 10/181: {Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers}
- H10D 30/0323: {comprising monocrystalline silicon}
- H10K 59/8051: {Anodes}
- H10K 2101/50: Oxidation-reduction potentials, e.g. excited state redox potentials
- H10P 90/1906: {Preparing SOI wafers}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

To provide a method of manufacturing a semiconductor device in which the space between semiconductor films transferred at plural locations is narrowed. A first bonding substrate having first projections is attached to a base substrate. Then, the first bonding substrate is separated at the first projections so that first semiconductor films are formed over the base substrate. Next, a second bonding substrate having second projections is attached to the base substrate so that the second projections are placed in regions different from regions where the first semiconductor films are formed. Subsequently, the second bonding substrate is separated at the second projections so that second semiconductor films are formed over the base substrate. In the second bonding substrate, the width of each second projection in a direction (a depth direction) perpendicular to the second bonding substrate is larger than the film thickness of each first semiconductor film formed first.

## Claims

### Claim 1

A method of manufacturing a semiconductor device, comprising:
attaching a plurality of first projections of a first bonding substrate to a base substrate;
separating the first bonding substrate at the plurality of first projections to form a plurality of first semiconductor films over the base substrate;
attaching a plurality of second projections of a second bonding substrate to the base substrate in regions different from regions where the plurality of first semiconductor films is formed; and
separating the second bonding substrate at the plurality of second projections to form a plurality of second semiconductor films over the base substrate in the regions different from the regions where the plurality of first semiconductor films is formed,
wherein a width of each of the plurality of second projections in a direction perpendicular to the second bonding substrate is larger than a film thickness of each of the plurality of first semiconductor films.

### Claim 2 (depends on 1)

The method of manufacturing a semiconductor device, according to claim 1,
wherein an insulating film is formed over the plurality of first projections by hydro oxidation or plasma oxidation, and
wherein the plurality of first projections is attached over the base substrate with the insulating film interposed between the plurality of first projections and the base substrate.

### Claim 3 (depends on 1)

The method of manufacturing a semiconductor device, according to claim 1,
wherein an insulating film is formed over the plurality of second projections by hydro oxidation or plasma oxidation, and
wherein the plurality of second projections is attached over the base substrate with the insulating film interposed between the plurality of second projections and the base substrate.

### Claim 4 (depends on 1)

The method of manufacturing a semiconductor device, according to claim 1,
wherein an insulating film is formed over the base substrate, and
wherein the plurality of first projections or the plurality of second projections is attached over the base substrate with the insulating film interposed between the plurality of first projections or the plurality of second projections and the base substrate.

### Claim 5 (depends on 1)

The method of manufacturing a semiconductor device, according to claim 1,
wherein a fragile layer is formed in the first bonding substrate by doping, and the first bonding substrate is separated at the fragile layer in such a way that the first bonding substrate is heated selectively by using dielectric heating by a microwave.

### Claim 6

A method of manufacturing a semiconductor device, comprising:
attaching a plurality of first projections of a first bonding substrate to a base substrate;
separating the first bonding substrate at the plurality of first projections to form a plurality of first semiconductor films over the base substrate;
attaching a plurality of second projections of a second bonding substrate to the base substrate in regions different from regions where the plurality of first semiconductor films is formed, so that the second bonding substrate overlaps with at least one of the plurality of first semiconductor films; and
separating the second bonding substrate at the plurality of second projections to form a plurality of second semiconductor films over the base substrate in the regions different from the regions where the plurality of first semiconductor films is formed,
wherein a width of each of the plurality of second projections in a direction perpendicular to the second bonding substrate is larger than a film thickness of each of the plurality of first semiconductor films.

### Claim 7 (depends on 6)

The method of manufacturing a semiconductor device, according to claim 6,
wherein an insulating film is formed over the plurality of first projections by hydro oxidation or plasma oxidation, and
wherein the plurality of first projections are attached over the base substrate with the insulating film interposed between the plurality of first projections and the base substrate.

### Claim 8 (depends on 6)

The method of manufacturing a semiconductor device, according to claim 6,
wherein an insulating film is formed over the plurality of second projections by hydro oxidation or plasma oxidation, and
wherein the plurality of second projections is attached over the base substrate with the insulating film interposed between the plurality of second projections and the base substrate.

### Claim 9 (depends on 6)

The method of manufacturing a semiconductor device, according to claim 6,
wherein an insulating film is formed over the base substrate, and
wherein the plurality of first projections or the plurality of second projections is attached over the base substrate with the insulating film interposed between the plurality of first projections or the plurality of second projections and the base substrate.

### Claim 10 (depends on 6)

The method of manufacturing a semiconductor device, according to claim 6,
wherein a fragile layer is formed in the first bonding substrate by doping, and the first bonding substrate is separated at the fragile layer in such a way that the first bonding substrate is heated selectively by using dielectric heating by a microwave.

### Claim 11

A method of manufacturing a semiconductor device, comprising:
attaching a plurality of first projections of a first bonding substrate to a base substrate;
separating the first bonding substrate at the plurality of first projections to form a plurality of first semiconductor films over the base substrate;
attaching a plurality of second projections of a second bonding substrate to the base substrate so that the second bonding substrate overlaps with at least one of the plurality of first semiconductor films in regions other than the plurality of second projections of the second bonding substrate; and
separating the second bonding substrate at the plurality of second projections to form a plurality of second semiconductor films over the base substrate,
wherein a width of each of the plurality of second projections in a direction perpendicular to the second bonding substrate is larger than a film thickness of each of the plurality of first semiconductor films.

### Claim 12 (depends on 11)

The method of manufacturing a semiconductor device, according to claim 11,
wherein an insulating film is formed over the plurality of first projections by hydro oxidation or plasma oxidation, and
wherein the plurality of first projections is attached over the base substrate with the insulating film interposed between the plurality of first projections and the base substrate.

### Claim 13 (depends on 11)

The method of manufacturing a semiconductor device, according to claim 11,
wherein an insulating film is formed over the plurality of second projections by hydro oxidation or plasma oxidation, and
wherein the plurality of second projections is attached over the base substrate with the insulating film interposed between the plurality of second projections and the base substrate.

### Claim 14 (depends on 11)

The method of manufacturing a semiconductor device, according to claim 11,
wherein an insulating film is formed over the base substrate, and
wherein the plurality of first projections or the plurality of second projections is attached over the base substrate with the insulating film interposed between the plurality of first projections or the plurality of second projections and the base substrate.

### Claim 15 (depends on 11)

The method of manufacturing a semiconductor device, according to claim 11,
wherein a fragile layer is formed in the first bonding substrate by doping, and the first bonding substrate is separated at the fragile layer in such a way that the first bonding substrate is heated selectively by using dielectric heating by a microwave.

### Claim 16

A method of manufacturing a semiconductor device, comprising:
attaching a plurality of first projections of a first bonding substrate to a base substrate;
separating the first bonding substrate at the plurality of first projections to form a plurality of first semiconductor films over the base substrate;
attaching a plurality of second projections of a second bonding substrate to the base substrate in regions different from regions where the plurality of first semiconductor films is formed; and
separating the second bonding substrate at the plurality of second projections to form a plurality of second semiconductor films over the base substrate in the regions different from the regions where the plurality of first semiconductor films is formed,
wherein a width of each of the plurality of second projections in a direction perpendicular to the second bonding substrate is larger than a film thickness of each of the plurality of first semiconductor films, and
wherein the plurality of first projections is located away from a rim of the first bonding substrate and the plurality of second projections is located away from a rim of the second bonding substrate.

### Claim 17 (depends on 16)

The method of manufacturing a semiconductor device, according to claim 16,
wherein an insulating film is formed over the plurality of first projections by hydro oxidation or plasma oxidation, and
wherein the plurality of first projections is attached over the base substrate with the insulating film interposed between the plurality of first projections and the base substrate.

### Claim 18 (depends on 16)

The method of manufacturing a semiconductor device, according to claim 16,
wherein an insulating film is formed over the plurality of second projections by hydro oxidation or plasma oxidation, and
wherein the plurality of second projections is attached over the base substrate with the insulating film interposed between the plurality of second projections and the base substrate.

### Claim 19 (depends on 16)

The method of manufacturing a semiconductor device, according to claim 16,
wherein an insulating film is formed over the base substrate, and
wherein the plurality of first projections or the plurality of second projections is attached over the base substrate with the insulating film interposed between the plurality of first projections or the plurality of second projections and the base substrate.

### Claim 20 (depends on 16)

The method of manufacturing a semiconductor device, according to claim 16,
wherein a fragile layer is formed in the first bonding substrate by doping, and the first bonding substrate is separated at the fragile layer in such a way that the first bonding substrate is heated selectively by using dielectric heating by a microwave.

### Claim 21

A method of manufacturing a semiconductor device, comprising:
attaching a plurality of first projections of a first bonding substrate to a base substrate;
separating the first bonding substrate at the plurality of first projections to form a plurality of first semiconductor films over the base substrate;
attaching a plurality of second projections of a second bonding substrate to the base substrate in regions different from regions where the plurality of first semiconductor films is formed, so that the second bonding substrate overlaps with at least one of the plurality of first semiconductor films; and
separating the second bonding substrate at the plurality of second projections to form a plurality of second semiconductor films over the base substrate in the regions different from the regions where the plurality of first semiconductor films is formed,
wherein a width of each of the plurality of second projections in a direction perpendicular to the second bonding substrate is larger than a film thickness of each of the plurality of first semiconductor films, and
wherein the plurality of first projections is located away from a rim of the first bonding substrate and the plurality of second projections is located away from a rim of the second bonding substrate.

### Claim 22 (depends on 21)

The method of manufacturing a semiconductor device, according to claim 21,
wherein an insulating film is formed over the plurality of first projections by hydro oxidation or plasma oxidation, and
wherein the plurality of first projections is attached over the base substrate with the insulating film interposed between the plurality of first projections and the base substrate.

### Claim 23 (depends on 21)

The method of manufacturing a semiconductor device, according to claim 21,
wherein an insulating film is formed over the plurality of second projections by hydro oxidation or plasma oxidation, and
wherein the plurality of second projections is attached over the base substrate with the insulating film interposed between the plurality of second projections and the base substrate.

### Claim 24 (depends on 21)

The method of manufacturing a semiconductor device, according to claim 21,
wherein an insulating film is formed over the base substrate, and
wherein the plurality of first projections or the plurality of second projections is attached over the base substrate with the insulating film interposed between the plurality of first projections or the plurality of second projections and the base substrate.

### Claim 25 (depends on 21)

The method of manufacturing a semiconductor device, according to claim 21,
wherein a fragile layer is formed in the first bonding substrate by doping, and the first bonding substrate is separated at the fragile layer in such a way that the first bonding substrate is heated selectively by using dielectric heating by a microwave.

### Claim 26

A method of manufacturing a semiconductor device, comprising:
attaching a plurality of first projections of a first bonding substrate to a base substrate;
separating the first bonding substrate at the plurality of first projections to form a plurality of first semiconductor films over the base substrate;
attaching a plurality of second projections of a second bonding substrate to the base substrate so that the second bonding substrate overlaps with at least one of the plurality of first semiconductor films in regions other than the plurality of second projections of the second bonding substrate; and
separating the second bonding substrate at the plurality of second projections to form a plurality of second semiconductor films over the base substrate,
wherein a width of each of the plurality of second projections in a direction perpendicular to the second bonding substrate is larger than a film thickness of each of the plurality of first semiconductor films, and
wherein the plurality of first projections is located away from a rim of the first bonding substrate and the plurality of second projections is located away from a rim of the second bonding substrate.

### Claim 27 (depends on 26)

The method of manufacturing a semiconductor device, according to claim 26,
wherein an insulating film is formed over the plurality of first projections by hydro oxidation or plasma oxidation, and
wherein the plurality of first projections is attached over the base substrate with the insulating film interposed between the plurality of first projections and the base substrate.

### Claim 28 (depends on 26)

The method of manufacturing a semiconductor device, according to claim 26,
wherein an insulating film is formed over the plurality of second projections by hydro oxidation or plasma oxidation, and
wherein the plurality of second projections is attached over the base substrate with the insulating film interposed between the plurality of second projections and the base substrate.

### Claim 29 (depends on 26)

The method of manufacturing a semiconductor device, according to claim 26,
wherein an insulating film is formed over the base substrate, and
wherein the plurality of first projections or the plurality of second projections is attached over the base substrate with the insulating film interposed between the plurality of first projections or the plurality of second projections and the base substrate.

### Claim 30 (depends on 26)

The method of manufacturing a semiconductor device, according to claim 26,
wherein a fragile layer is formed in the first bonding substrate by doping, and the first bonding substrate is separated at the fragile layer in such a way that the first bonding substrate is heated selectively by using dielectric heating by a microwave.