# US 7,745,309 B2 · Methods for surface activation by plasma immersion ion implantation process utilized in silicon-on-insulator structure

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- Number: US 7,745,309 B2
- Document ID: US7745309B2
- Status: Granted
- Kind: B2
- Application number: 11/463,425
- Filed: 2006-08-09
- Published: 2008-02-14
- Granted: 2010-06-29
- Earliest claimed: 2006-08-09
- Assignees: Applied Materials, Inc.
- Inventors: Randhir P S Thakur; Stephen Moffatt; Per-Ove Hansson; Steve Ghanayem
- Web page: https://patentgrep.com/patent/US7745309B2

## CPC

- H10P 90/1916: {with separation or delamination along an ion implanted layer, e.g. Smart-cut}
- H01J 37/32412: {Plasma immersion ion implantation}
- H10W 10/181: {Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Methods for promoting interface bonding energy utilized in SOI technology are provided. In one embodiment, the method for promoting interface bonding energy includes providing a first substrate and a second substrate, wherein the first substrate has a silicon oxide layer formed thereon and a cleavage plane defined therein, performing a dry cleaning process on a surface of the silicon oxide layer and a surface of the second substrate, and bonding the cleaned silicon oxide surface of the first substrate to the cleaned surface of the second substrate.

## Claims

### Claim 1

A method for promoting interface bonding energy for forming an silicon on insulator (SOI) structure, comprising:
providing a first substrate and a second substrate in a plasma immersion ion implantation processing chamber, wherein the first substrate has a silicon oxide layer formed thereon and a cleavage plane defined therein;
performing a dry cleaning process on the silicon oxide layer of the first substrate in the plasma immersion ion implantation processing chamber and a surface of the second substrate; and
bonding the cleaned silicon oxide layer to the cleaned surface of the second substrate.

### Claim 2 (depends on 1)

The method of claim 1, wherein the step of performing the dry cleaning process further comprises:
performing a plasma immersion ion implantation process in the plasma immersion ion implantation processing chamber.

### Claim 3 (depends on 1)

The method of claim 1, wherein the step of performing the dry cleaning process further comprises:
exposing the substrates to a halogen containing gas.

### Claim 4 (depends on 3)

The method of claim 3, wherein the halogen containing gas comprises at least one of Cl2, F2, Br2, HCl, HBr, SF6, and NF3.

### Claim 5 (depends on 1)

The method of claim 1, wherein the step of performing the dry cleaning process further comprises:
maintaining a RF bias power less than about 500 Volts.

### Claim 6 (depends on 1)

The method of claim 1, wherein the step of performing the dry cleaning process further comprises:
controlling ion penetration during the dry cleaning process at a depth less than 50 Å from the substrate surface.

### Claim 7 (depends on 1)

The method of claim 1, wherein the step of performing the dry cleaning process further comprises
exposing the substrates to an inert gas.

### Claim 8 (depends on 7)

The method of claim 7, wherein the inert gas comprises at least one of Ar, He, Kr, Xe and N2.

### Claim 9 (depends on 1)

The method of claim 1, wherein the step of performing the dry cleaning process further comprises:
removing particles and/or contaminants from the surfaces of the first substrate and the second substrate.

### Claim 10 (depends on 1)

The method of claim 1, wherein the step of performing the dry cleaning process further comprises:
activating the surface of the first substrate and the second substrate.

### Claim 11 (depends on 1)

The method of claim 1, wherein the step of performing the dry cleaning process further comprises:
exposing the substrates to an oxygen gas.

### Claim 12 (depends on 11)

The method of claim 11, wherein the step of exposing the substrates to an oxygen gas further comprises:
oxidizing the surfaces of the first substrate and the second substrate; and
altering the surfaces of the first substrate and the second substrate into hydrophilic state.

### Claim 13 (depends on 1, 11)

The method of claim 11, wherein the step of claim 1, wherein the step of bonding the cleaned surface further comprises:
heating the bonded substrates to a temperature greater than about 800 degrees Celsius.

### Claim 14 (depends on 1)

The method of claim 1, further comprising:
splitting the first substrate along the cleavage plane.

### Claim 15 (depends on 1)

The method of claim 1, further comprising:
forming an silicon on insulator (SOI) structure on the second substrate.

### Claim 16

A method for promoting interface bonding energy for forming an silicon on insulator (SOI) structure, comprising:
providing a first substrate and a second substrate in a plasma immersion ion implantation processing chamber, wherein the first substrate has a silicon oxide layer formed thereon and a cleavage plane defined therein;
removing particles and/or contaminants from surfaces of the first substrate and the second substrate by a dry cleaning process performed in the plasma immersion ion implantation processing chamber;
activating the cleaned surfaces of the first substrate and the second substrate while removing particles during the dry cleaning process; and
bonding the silicon oxide layer disposed on the first substrate to the activated surface of the second substrate.

### Claim 17 (depends on 16)

The method of claim 16, wherein the step of removing the particles and/or contaminants further comprises:
bombarding the surfaces with ions.

### Claim 18 (depends on 17)

The method of claim 17, wherein the step of bombarding further comprises:
generating halogen ions.

### Claim 19 (depends on 17)

The method of claim 17, wherein the step of bombarding further comprises:
maintaining a RF bias power less than 500 Volts.

### Claim 20 (depends on 17)

The method of claim 17, wherein the step of bombarding further comprises:
controlling ion penetration to a depth less than 50 Å from the surfaces of the first and the second substrate.

### Claim 21 (depends on 16)

The method of claim 16, wherein the step of activating the surfaces of the first substrate and the second substrate further comprises:
oxidizing the surfaces of the first substrate and the second substrate.

### Claim 22

A method for promoting interface bonding energy for forming an silicon on insulator (SOI) structure, comprising:
providing a first substrate and a second substrate, wherein the first substrate has a silicon oxide layer formed thereon and a cleavage plane defined therein;
performing a dry cleaning process on a surface of the silicon oxide layer and a surface of the second substrate by supplying a halogen containing gas in a plasma immersion ion implantation processing chamber;
activating the surfaces of the first substrate and the second substrate while performing the dry cleaning process; and
bonding the silicon oxide surface to the activated surface of the second substrate.

### Claim 23 (depends on 22)

The method of claim 22, wherein the halogen containing gas comprises at least one of Cl2, F2, Br2, HCl, HBr, SF6, and NF3.