# US 7,745,306 B2 · Method for producing bonded wafer

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- Number: US 7,745,306 B2
- Document ID: US7745306B2
- Status: Granted
- Kind: B2
- Application number: 11/880,144
- Filed: 2007-07-20
- Published: 2008-01-24
- Granted: 2010-06-29
- Earliest claimed: 2006-07-20
- Assignees: Sumco Corporation
- Inventors: Hidehiko Okuda; Tatsumi Kusaba
- Web page: https://patentgrep.com/patent/US7745306B2

## CPC

- H10P 90/1916: {with separation or delamination along an ion implanted layer, e.g. Smart-cut}
- H10W 10/181: {Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A bonded wafer is produced by a method comprising a step of implanting ions of a light element such as hydrogen, helium or the like into a wafer for active layer at a predetermined depth position to form an ion implanted layer, a step of bonding the wafer for active layer to a wafer for support substrate through an insulating film, a step of exfoliating the wafer at the ion implanted layer, a first heat treatment step of conducting a sacrificial oxidation for reducing damage on a surface of an active layer exposed through the exfoliation and a second heat treatment step of raising a bonding strength, in which the second heat treatment step is continuously conducted after the first heat treatment step without removing an oxide film formed on the surface of the active layer.

## Claims

### Claim 1

A method for producing a bonded wafer, the method comprising:
implanting ions of a light element such as hydrogen, helium or the like into a wafer for active layer at a predetermined depth position to form an ion implanted layer;
bonding the wafer for active layer to a wafer for support substrate through an insulating film;
exfoliating the wafer at the ion implanted layer at a heat temperature of between 400 and 600 degrees Celsius;
a first heat treatment step, carried out at a first temperature, for conducting a sacrificial oxidation for reducing damage on a surface of an active layer exposed through the exfoliation; and
a second heat treatment step, carried out at a second temperature, for raising a bonding strength, the second heat treatment step being continuously conducted after the first heat treatment step without removing an oxide film formed on the surface of the active layer,
wherein the second temperature is higher than the first temperature;
a cleaning step occurring after the second heat treatment step, and
a planarization heat treatment step occurring after the cleaning step;
wherein the first heat treatment step is a heat treatment in an oxygen atmosphere of not higher than 900° C.

### Claim 2 (depends on 1)

A method for producing a bonded wafer according to claim 1, wherein the second heat treatment step is a heat treatment conducted in an oxygen or nitrogen atmosphere of not lower than 1050° C. for not less than 2 hours.