# US 7,745,296 B2 · Raised source and drain process with disposable spacers

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 7,745,296 B2
- Document ID: US7745296B2
- Status: Granted
- Kind: B2
- Application number: 11/147,383
- Filed: 2005-06-08
- Published: 2006-12-14
- Granted: 2010-06-29
- Earliest claimed: 2005-06-08
- Assignees: Globalfoundries Inc.
- Inventors: Johannes van Meer; Huicai Zhong
- Web page: https://patentgrep.com/patent/US7745296B2

## CPC

- H10D 64/015: {removing at least parts of gate spacers, e.g. disposable spacers}
- H10D 30/0275: {forming single crystalline semiconductor source or drain regions resulting in recessed gates, e.g. forming raised source or drain regions}
- H10D 30/608: {having non-planar bodies, e.g. having recessed gate electrodes}
- H10D 64/259: {Source or drain electrodes being self-aligned with the gate electrode and having bottom surfaces higher than the interface between the channel and the gate dielectric}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A method for forming raised source and drain regions in a semiconductor manufacturing process employs double disposable spacers. A deposited oxide is provided between the first and second disposable spacers, and serves to protect the gate electrode, first disposable spacers and a cap layer during the dry etching of the larger, second disposable spacers. Mouse ears are thereby prevented, while the use of a second disposable spacer avoids shadow-effects during halo ion-implants.

## Claims

### Claim 1

A method of forming raised source and drain areas, comprising the steps:
forming a gate electrode on a substrate;
forming a cap on the gate electrode;
forming double disposable spacers on each sidewall of the gate electrode after forming the cap layer;
forming raised source/drain regions on the substrate after forming the double disposable spacers; and
removing the double disposable spacers after forming the raised source/drain regions, wherein
the step of forming double disposable spacers includes forming first nitride spacers on the gate electrode and forming an oxide liner on the first nitride spacers.

### Claim 2 (depends on 1)

The method of claim 1, wherein the step of forming double disposable spacers includes forming second nitride spacers on the oxide liner.

### Claim 3 (depends on 2)

The method of claim 2, further comprising forming a hardmask on the cap prior to forming the first nitride spacers.

### Claim 4 (depends on 3)

The method of claim 3, wherein the step of forming first nitride spacers includes forming a nitride layer directly contacting the sidewalls of the gate electrodes and covering the hardmask and the cap.

### Claim 5 (depends on 2)

The method of claim 2, further comprising forming an oxide layer directly contacting the sidewalls of the gate electrode, and forming the first nitride spacers on the oxide layer.

### Claim 6 (depends on 5)

The method of claim 5, wherein the step of removing the double disposable spacers includes performing a series of nitride and oxide etches to remove the first and second nitride spacers, the oxide layer, the oxide liner and the cap.

### Claim 7 (depends on 4)

The method of claim 4, wherein the step of removing the double disposable spacers includes performing a series of nitride and oxide etches to remove the first and second nitride spacers, the oxide liner, the hardmask and the cap.

### Claim 8

A method of forming a semiconductor arrangement, comprising the steps:
forming first disposable spacers on a gate electrode;
forming an oxide liner on the first disposable spacers;
forming second disposable spacers on the oxide liner;
forming raised source/drain regions after forming the first and second disposable spacers; and
removing the first and second disposable spacers after forming the raised source/drain regions,
wherein the first and second disposable spacers are made of nitride and
wherein the first disposable spacers completely cover sidewalls of the gate electrode during the forming of the raised source/drain regions.

### Claim 9 (depends on 8)

The method of claim 8, further comprising forming a nitride cap on the gate electrode.

### Claim 10 (depends on 9)

The method of claim 9, further comprising forming a hardmask on the nitride cap, and wherein the step of forming the first disposable spacers include forming a first nitride layer on the sidewalls of the gate electrode and over the nitride cap and the hardmask.

### Claim 11 (depends on 10)

The method of claim 10, wherein the step of forming the second disposable spacers includes blanket depositing a second nitride layer over the oxide liner and etching the second nitride layer.

### Claim 12 (depends on 9)

The method of claim 9, further comprising forming an oxide layer directly contacting the sidewalls of the gate electrode, and forming the first disposable spacers on the oxide layer.

### Claim 13 (depends on 12)

The method of claim 12, wherein the step of forming the second disposable spacers includes blanket depositing a nitride layer over the oxide liner and etching the nitride layer.