# US 7,745,272 B2 · Method for surfaced-passivated zinc-oxide

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- Number: US 7,745,272 B2
- Document ID: US7745272B2
- Status: Granted
- Kind: B2
- Application number: 12/199,378
- Filed: 2008-08-27
- Published: 2009-02-12
- Granted: 2010-06-29
- Earliest claimed: 2005-12-20
- Assignees: Palo Alto Research Center Incorporated
- Inventors: Christian G. Van de Walle; Kiesel Peter; Oliver Schmidt
- Web page: https://patentgrep.com/patent/US7745272B2

## CPC

- G01N 27/414: Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
- B82Y 15/00: Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
- B82Y 30/00: Nanotechnology for materials or surface science, e.g. nanocomposites
- H10D 62/826: comprising only Group II-VI materials heterojunctions, e.g. CdTe/HgTe heterojunctions
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A semiconductor device has a heterostructure including a first layer of semiconductor oxide material. A second layer of semiconductor oxide material is formed on the first layer of semiconductor oxide material such that a two dimensional electron gas builds up at an interface between the first and second materials. A passivation layer on the outer surface stabilizes the structure. The device also has a source contact and a drain contact.

## Claims

### Claim 1

A method of manufacturing a semiconductor device, comprising:
providing a substrate;
providing first and second layers of semiconductor oxide material such that a two dimensional electron gas will form at an interface between the first and second layers;
forming a passivation layer on an outer surface of a structure formed of the first and second layers; and
depositing source and drain contacts on the passivation layer.

### Claim 2 (depends on 1)

The method of claim 1, providing a substrate further comprising providing a substrate from the group consisting of: silicon, sapphire, zinc oxide, cadmium, silicon carbide, SCAM and gallium nitride.

### Claim 3 (depends on 1)

The method of claim 1, providing the first and second layers further comprising providing a layer of zinc oxide.

### Claim 4 (depends on 1)

The method of claim 1, providing the first and second layers further comprising providing a layer of a zinc oxide alloy.

### Claim 5 (depends on 1)

The method of claim 1, the method further comprising growing a third layer of semiconductor oxide material on the second layer to form the outer surface of the structure.

### Claim 6 (depends on 1)

The method of claim 1, the method further comprising depositing a metal gate in a region between the source contact and the drain contact.

### Claim 7 (depends on 1)

The method of claim 1, forming a passivation layer further comprising forming a layer of one of the group consisting of: silicon, silicon oxide, silicon nitride, silicon oxynitride.

### Claim 8 (depends on 1)

The method of claim 1, forming a passivation layer further comprising forming one selected from the group consisting of: a thin layer deposited in-situ after growth of either the first or second semiconductor oxide layer, whichever resides on the outer surface of the device, an organic compound, polyimide and a self-assembled monolayer.

### Claim 9 (depends on 1)

The method of claim 1, forming a passivation layer further comprising forming a passivation layer such that a surface conductivity is one of either avoided or destroyed.