# US 7,745,268 B2 · Method for manufacturing a semiconductor device with irradiation of single crystal semiconductor layer in an inert atmosphere

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- Number: US 7,745,268 B2
- Document ID: US7745268B2
- Status: Granted
- Kind: B2
- Application number: 12/153,644
- Filed: 2008-05-22
- Published: 2008-12-04
- Granted: 2010-06-29
- Earliest claimed: 2007-06-01
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Inventors: Hidekazu Miyairi
- Web page: https://patentgrep.com/patent/US7745268B2

## CPC

- H10P 90/1916: {with separation or delamination along an ion implanted layer, e.g. Smart-cut}
- H10D 86/425: {having different crystal properties in different TFTs or within an individual TFT}
- H10D 86/60: wherein the TFTs are in active matrices
- H10W 10/181: {Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers}
- H10D 30/0323: {comprising monocrystalline silicon}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

To provide a semiconductor device with high performance and low cost and a manufacturing method thereof. A first region including a separated (cleavage) single-crystal semiconductor layer and a second region including a non-single-crystal semiconductor layer are provided over a substrate. It is preferable that laser beam irradiation be performed to the separated (cleavage) single-crystal semiconductor layer in an inert atmosphere, and laser beam irradiation be performed to the non-single-crystal semiconductor layer in an air atmosphere at least once.

## Claims

### Claim 1

A manufacturing method of a semiconductor device comprising:
forming a non-single-crystal semiconductor film over a substrate;
removing a part of the non-single-crystal semiconductor film, which is in a first region over the substrate, to form a non-single-crystal semiconductor layer in a second region over the substrate;
introducing ion species into a single-crystal semiconductor substrate to form an ion layer at a predetermined depth from a surface of the single-crystal semiconductor substrate;
forming a bonding layer over the surface of the single-crystal semiconductor substrate;
bonding the bonding layer to the first region over the substrate;
applying an energy to the single-crystal semiconductor substrate to generate a crack in the ion layer so that a single-crystal semiconductor layer remains in the first region over the substrate;
irradiating the single-crystal semiconductor layer with a laser beam in an inert atmosphere; and
irradiating the non-single-crystal semiconductor layer with a laser beam in an air atmosphere.

### Claim 2 (depends on 1)

The manufacturing method of a semiconductor device according to claim 1, wherein a driver circuit is formed in the first region and a pixel area including liquid crystal display elements is formed in the second region.

### Claim 3 (depends on 1)

The manufacturing method of a semiconductor device according to claim 1, wherein a pixel area including electroluminescent display elements is formed in the first region and a driver circuit is formed in the second region.

### Claim 4 (depends on 1)

The manufacturing method of a semiconductor device according to claim 1, wherein an analog circuit is formed in the first region and a digital circuit is formed in the second region.

### Claim 5 (depends on 1)

The manufacturing method of a semiconductor device according to claim 1, wherein the introducing step is conducted by an implantation or doping.

### Claim 6 (depends on 1)

The manufacturing method of a semiconductor device according to claim 1, wherein the semiconductor device is one selected from the group consisting of a portable information terminal, a camera, a telephone, a navigation system, and a computer.