# US 7,745,252 B2 · Semiconductor device and manufacturing method thereof > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,745,252 B2 - Document ID: US7745252B2 - Status: Granted - Kind: B2 - Application number: 11/510,396 - Filed: 2006-08-25 - Published: 2007-03-01 - Granted: 2010-06-29 - Earliest claimed: 2005-08-31 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Inventors: Tsunenori Suzuki; Ryoji Nomura; Mikio Yukawa; Nobuharu Ohsawa; Tamae Takano; Yoshinobu Asami; Takehisa Sato - Web page: https://patentgrep.com/patent/US7745252B2 ## CPC - H10K 71/50: Forming devices by joining two substrates together, e.g. lamination techniques - H10K 71/60: Forming conductive regions or layers, e.g. electrodes - H10K 71/80: using temporary substrates - H10K 59/1201: {Manufacture or treatment} - H10K 59/17: Passive-matrix OLED displays - H10K 71/40: Thermal treatment, e.g. annealing in the presence of a solvent vapour - H10K 2102/311: {Flexible OLED} - Y02E 10/549: Organic PV cells - Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION - Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS ## Abstract It is an object of the present invention to manufacture, with high yield, a semiconductor device in which an element that has a layer containing an organic compound is provided over a flexible substrate. A method for manufacturing a semiconductor device includes: forming a separation layer over a substrate; forming an element-formed layer over the separation layer by forming an inorganic compound layer, a first conductive layer, and a layer containing an organic compound and forming a second conductive layer which is in contact with the layer containing an organic compound and the inorganic compound layer; and separating the separation layer and the element-formed layer from each other after pasting a first flexible substrate over the second conductive layer. ## Claims ### Claim 1 A method for manufacturing a semiconductor device, comprising steps of: forming a separation layer over a substrate; forming an inorganic compound layer on and in direct contact with the separation layer; forming a first conductive layer on and in direct contact with the inorganic compound layer; forming a layer containing an organic compound over the first conductive layer; forming a second conductive layer over the layer containing the organic compound to form an element, wherein a portion of the second conductive layer is in direct contact with the inorganic compound layer through an opening in the layer containing the organic compound; and separating the first and second conductive layers and the layer containing the organic compound from the substrate at the separation layer. ### Claim 2 (depends on 1) A method for manufacturing a semiconductor device according to claim 1, wherein the inorganic compound layer is an insulating layer. ### Claim 3 (depends on 1) A method for manufacturing a semiconductor device according to claim 1, wherein the inorganic compound layer is containing at least one of silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride. ### Claim 4 (depends on 1) A method for manufacturing a semiconductor device according to claim 1, wherein the separation layer is formed from a layer containing at least one of tungsten, molybdenum, tungsten oxide, molybdenum oxide, tungsten oxynitride, molybdenum oxynitride. ### Claim 5 (depends on 1) A method for manufacturing a semiconductor device according to claim 1, wherein the second conductive layer is containing at least one of aluminum, an alloy of aluminum, europium, an alloy of europium, ytterbium, and an alloy of ytterbium, or at least one of indium tin oxide, indium tin oxide containing silicon, indium oxide containing 2 to 20 atomic % of zinc oxide, titanium, gold, platinum, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium nitride, tungsten nitride, and molybdenum nitride. ### Claim 6 (depends on 1) A method for manufacturing a semiconductor device according to claim 1, wherein the layer containing the organic compound is a layer that changes in a crystal condition, conductivity, and a shape by applying voltage to the first conductive layer and the second conductive layer. ### Claim 7 (depends on 1) A method for manufacturing a semiconductor device according to claim 1, wherein the layer containing the organic compound includes a light emitting layer. ### Claim 8 (depends on 1) A method for manufacturing a semiconductor device according to claim 1, wherein the layer containing the organic compound is a layer generating photocurrent. ### Claim 9 (depends on 1) A method for manufacturing a semiconductor device according to claim 1, wherein the element is one of a storage element, a light-emitting element, a photoelectric conversion element, a solar cell, and a transistor. ### Claim 10 (depends on 1) A method for manufacturing a semiconductor device according to claim 1, comprising further step of: forming an organic insulating film over the first conductive layer to cover an edge portion of the first conductive layer. ### Claim 11 (depends on 1) A method for manufacturing a passive matrix type semiconductor device comprising the steps according to claim 1. ### Claim 12 A semiconductor device comprising: a first substrate; a separation layer provided over the first substrate; an inorganic compound layer provided on and in direct contact with the separation layer; a first conductive layer provided on and in direct contact with the inorganic compound layer; a layer containing an organic compound provided over the first conductive layer; a second conductive layer provided over the layer containing the organic compound to form an element; and a second substrate having flexibility and provided over the second conductive layer, wherein a portion of the second conductive layer is in direct contact with the inorganic compound layer through an opening in the layer containing the organic compound. ### Claim 13 (depends on 12) A semiconductor device according to claim 12, wherein the inorganic compound layer is an insulating layer. ### Claim 14 (depends on 12) A semiconductor device according to claim 12, wherein the inorganic compound layer is containing at least one of silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride. ### Claim 15 (depends on 12) A semiconductor device according to claim 12, wherein the separation layer is formed from a layer containing at least one of tungsten, molybdenum, tungsten oxide, molybdenum oxide, tungsten oxynitride, molybdenum oxynitride. ### Claim 16 (depends on 12) A semiconductor device according to claim 12, wherein the layer containing the organic compound is a layer that changes in a crystal condition, conductivity, and a shape by applying voltage to the first conductive layer and the second conductive layer. ### Claim 17 (depends on 12) A method for manufacturing a semiconductor device according to claim 12, wherein the layer containing the organic compound includes a light emitting layer. ### Claim 18 (depends on 12) A method for manufacturing a semiconductor device according to claim 12, wherein the layer containing the organic compound is a layer generating photocurrent. ### Claim 19 (depends on 12) A semiconductor device according to claim 12, wherein an edge portion of the first conductive layer is covered with an organic insulating layer ### Claim 20 (depends on 12) A passive matrix type semiconductor device comprising the semiconductor device according to claim 12. ### Claim 21 (depends on 1) A method for manufacturing a semiconductor device according to claim 1, wherein the portion of the second conductive layer being in direct contact with the inorganic compound layer is provided in a first region over the substrate, wherein an another portion of the second conductive layer being in direct contact with the layer containing the organic compound is provided in a second region over the substrate, and wherein the first region surrounds an outer edge of the second region over the substrate. ### Claim 22 (depends on 21) A method for manufacturing a semiconductor device according to claim 21, wherein the first region is continuously surrounding the outer edge of the second region. ### Claim 23 (depends on 21) A method for manufacturing a semiconductor device according to claim 21, wherein the first region is discontinuously surrounding the outer edge of the second region. ### Claim 24 (depends on 23) A method for manufacturing a semiconductor device according to claim 23, wherein the first region has any one of a rectangular shape, a circular shape, an elliptical shape and a curved shape. ### Claim 25 (depends on 12) A semiconductor device according to claim 12, wherein the portion of the second conductive layer being in direct contact with the inorganic compound layer is provided in a first region over the substrate, wherein an another portion of the second conductive layer being in direct contact with the layer containing the organic compound is provided in a second region over the substrate, and wherein the first region surrounds an outer edge of the second region over the substrate. ### Claim 26 (depends on 25) A semiconductor device according to claim 25, wherein the first region is continuously surrounding the outer edge of the second region. ### Claim 27 (depends on 25) A semiconductor device according to claim 25, wherein the first region is discontinuously surrounding the outer edge of the second region. ### Claim 28 (depends on 27) A method for manufacturing a semiconductor device according to claim 27, wherein the first region has any one of a rectangular shape, a circular shape, an elliptical shape and a curved shape.