# US 7,745,099 B2 · Photosensitive compound and photoresist composition including the same

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- Number: US 7,745,099 B2
- Document ID: US7745099B2
- Status: Granted
- Kind: B2
- Application number: 12/270,532
- Filed: 2008-11-13
- Published: 2009-10-01
- Granted: 2010-06-29
- Earliest claimed: 2007-11-14
- Assignees: Dongjin Semichem Co., Ltd.
- Inventors: Jung-Woo Kim; Deog-Bae Kim; Jae-Hyun Kim
- Web page: https://patentgrep.com/patent/US7745099B2

## CPC

- G03F 7/0045: {with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors}
- C07C 69/94: of polycyclic hydroxy carboxylic acids, the hydroxy groups and the carboxyl groups of which are bound to carbon atoms of six-membered aromatic rings
- C08G 65/3315: {aromatic}
- C08G 65/3326: {aromatic}
- C08G 65/3346: {having sulfur bound to carbon and oxygen}
- G03F 7/0392: {the macromolecular compound being present in a chemically amplified positive photoresist composition}
- C07C 2601/08: the ring being saturated
- C07C 2601/14: The ring being saturated
- C07C 2603/74: Adamantanes
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)
- C07C: ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C08G: MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS

## Abstract

A photosensitive compound as a molecular resist whose size is smaller than conventional polymer for photoresist, and which can form a nano assembly, and a photoresist composition including the same are disclosed. The photosensitive compound represented by the following formula. Also, the present invention provides a photoresist composition comprising 1 to 85 wt % (weight %) of the photosensitive compound; 0.05 to 15 weight parts of a photo-acid generator with respect to 100 weight parts of the photosensitive compound; and 50 to 5000 weight parts of an organic solvent with respect to 100 weight parts of the photosensitive compound. In the formula, n is the number of repetition of an isopropyl oxide (—CH(CH3)CH2O—) monomer, and is an integer of 1 to 40, and R is an alkyl group of 1 to 20 carbon atoms or a cycloalkyl group of 3 to 20 carbon atoms.

## Claims

### Claim 1

A photosensitive compound which has a structure of the following Formula 1,
wherein in Formula 1, n is the number of repetition of an isopropyl oxide (—CH(CH3)CH2O—) monomer, and is an integer of 1 to 40, and R is an alkyl group or a cycloalkyl group of C5˜C20 which comprises one or more substituents selected from the group consisting of a hydroxyl group and a halogen group, or comprises an ether group or an ester group.

### Claim 2

A photosensitive compound, wherein the photosensitive compound is selected from the group consisting of compounds represented by the following Formulas,

### Claim 3

A photoresist composition comprising: 1 to 85 wt % of a photosensitive compound having a structure of the following Formula 1,
wherein, n is the number of repetition of an isopropyl oxide (—CH(CH3)CH2O—) monomer, and is an integer of 1 to 40, and R is an alkyl group of 1 to 20 carbon atoms or a cycloalkyl group of 3 to 20 carbon atoms;
0.05 to 15 weight parts of a photo-acid generator with respect to 100 weight parts of the photosensitive compound; and
50 to 5000 weight parts of an organic solvent with respect to 100 weight parts of the photosensitive compound.

### Claim 4 (depends on 3)

The photoresist composition of claim 3, further comprising 0.01 to 10 weight parts of a base compound with respect to 100 weight parts of the photosensitive compound, wherein, the base compound is selected from a group of consisting of tri-ethylamine, tri-iso-butylamine, tri-iso-octylamine, di-ethanolamine, tri-ethanolamine and mixture thereof.

### Claim 5

A method for forming a photoresist pattern, comprising the step of:
a) coating a photoresist composition on a substrate to form a photoresist layer;
b) exposing the photoresist layer to a light;
c) heating the exposed photoresist layer; and
d) developing the heated photoresist layer to form the photoresist pattern,
wherein the photoresist composition comprises 1 to 85 wt % of a photosensitive compound having a structure of the following Formula 1,
wherein, n is the number of repetition of an isopropyl oxide (—CH(CH3)CH2O—) monomer, and is an integer of 1 to 40, and R is an alkyl group of 1 to 20 carbon atoms or a cycloalkyl group of 3 to 20 carbon atoms;
0.05 to 15 weight parts of a photo-acid generator with respect to 100 weight parts of the photosensitive compound; and
50 to 5000 weight parts of an organic solvent with respect to 100 weight parts of the photosensitive compound.