# US 7,745,068 B2 · Binary photomask having a compensation layer > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,745,068 B2 - Document ID: US7745068B2 - Status: Granted - Kind: B2 - Application number: 11/446,980 - Filed: 2006-06-06 - Published: 2007-03-08 - Granted: 2010-06-29 - Earliest claimed: 2005-09-02 - Assignees: Samsung Electronics Co., Ltd. - Inventors: Jin-Sik Jung; Hee-Bom Kim; Woo-Sung Han; Sung-Min Huh - Web page: https://patentgrep.com/patent/US7745068B2 ## CPC - G03F 1/29: Rim PSM or outrigger PSM; Preparation thereof - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) ## Abstract A binary photomask with an improved resolution and a method of manufacturing the same are provided. The binary photomask may include a substrate, a transmission-prevention pattern formed on the substrate to define a circuit pattern, and a compensation layer configured to change light transmitted through the binary photomask based on a topology of the compensation layer and arranged on the transmission-prevention layer and/or the substrate. ## Claims ### Claim 1 A binary photomask, comprising: a substrate; a transmission-prevention pattern arranged on the substrate to define a circuit pattern; and a compensation layer arranged on at least one of the substrate and the transmission-prevention pattern, and configured to change light transmitted through the binary photomask based on a topology of the compensation layer; wherein the topology of the compensation layer changes the light transmitted through the binary photomask to decrease the intensity of 0th-order light and to increase the intensity of 1st-order light. ### Claim 2 (depends on 1) The binary photomask of claim 1, wherein the compensation layer has a three-dimensional topological structure. ### Claim 3 (depends on 1) The binary photomask of claim 1, wherein the substrate is a mask substrate. ### Claim 4 (depends on 1) The binary photomask of claim 1, wherein the compensation layer is a film, formed on a surface of the substrate and a surface of the transmission-prevention layer, and conforms with the transmission-prevention pattern. ### Claim 5 (depends on 1) The binary photomask of claim 1, wherein a ratio of a line width (L) of the transmission-prevention pattern to a space (S) between the transmission-prevention pattern and an adjacent transmission-prevention pattern is represented by L/S<1/2. ### Claim 6 (depends on 1) The binary photomask of claim 1, wherein the a ratio of a line width (L) of the transmission-prevention pattern to a space (S) between the transmission-prevention pattern and an adjacent transmission-prevention pattern is represented by L/S<1/3. ### Claim 7 (depends on 1) The binary photomask of claim 1, wherein the compensation layer is transparent. ### Claim 8 (depends on 1) The binary photomask of claim 1, wherein the compensation layer has a thickness greater than or equal to 100 angstroms and less than or equal to 5,000 angstroms. ### Claim 9 (depends on 1) The binary photomask of claim 1, wherein the compensation layer has a thickness greater than or equal to 2,000 angstroms and less than or equal to 5,000 angstroms. ### Claim 10 (depends on 1) The binary photomask of claim 1, wherein the compensation layer is a transparent material. ### Claim 11 (depends on 10) The binary photomask of claim 10, wherein the compensation layer is at least one of a silicon oxide layer, a silicon nitride layer, and a hafnium oxide layer. ### Claim 12 (depends on 1) The binary photomask of claim 1, wherein the compensation layer is patterned, and wherein the compensation layer includes a compensation pattern having at least one sidewall. ### Claim 13 (depends on 12) The binary photomask of claim 12, wherein a line width of the compensation pattern is smaller than a line width of the transmission-prevention pattern. ### Claim 14 (depends on 12) The binary photomask of claim 12, wherein the compensation pattern has a thickness greater than or equal to 10 angstroms and less than or equal to 5,000 angstroms. ### Claim 15 (depends on 12) The binary photomask of claim 12, wherein the compensation pattern has a thickness greater than or equal to 2,000 angstroms and less than or equal to 5,000 angstroms. ### Claim 16 (depends on 12) The binary photomask of claim 12, wherein the transmission-prevention pattern and the compensation pattern have a same line width. ### Claim 17 (depends on 16) The binary photomask of claim 16, wherein the at least one sidewall of the compensation pattern is in a same plane as at least one sidewall of the transmission-prevention pattern. ### Claim 18 (depends on 12) The binary photomask of claim 12, wherein the at least one sidewall of the compensation pattern is arranged on at least one sidewall of the transmission-prevention pattern. ### Claim 19 (depends on 18) The binary photomask of claim 18, wherein at least a portion of the top surface of the transmission-prevention pattern is covered by the compensation pattern. ### Claim 20 A binary photomask, comprising: a substrate; a transmission-prevention pattern arranged on the substrate to define a circuit pattern; and a compensation layer arranged on at least one of the substrate and the transmission-prevention pattern, and configured to change light transmitted through the binary photomask based on a topology of the compensation layer; wherein the topology of the compensation layer changes the light transmitted through the binary photomask to increase the intensity of 1st-order light.