# US 7,745,014 B2 · Multilayer getter structures and methods for making same

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- Number: US 7,745,014 B2
- Document ID: US7745014B2
- Status: Granted
- Kind: B2
- Application number: 12/152,490
- Filed: 2008-05-13
- Published: 2009-01-01
- Granted: 2010-06-29
- Earliest claimed: 2003-06-11
- Assignees: Saes Getters S.P.A.
- Inventors: Andrea Conte; Marco Moraja
- Web page: https://patentgrep.com/patent/US7745014B2

## CPC

- B32B 15/01: all layers being exclusively metallic {(making layered metal workpieces by pressure cladding B23K20/22; making coatings with a metallic material characterised by its composition C23C30/00)}
- H01J 7/183: {Composition or manufacture of getters}
- Y10T 428/12479: Porous [e.g., foamed, spongy, cracked, etc.]
- Y10T 428/12493: Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T 428/12611: Oxide-containing component
- Y10T 428/12806: Refractory [Group IVB, VB, or VIB] metal-base component
- Y10T 428/12812: Diverse refractory group metal-base components: alternative to or next to each other
- Y10T 428/12819: Group VB metal-base component
- Y10T 428/12875: Platinum group metal-base component
- Y10T 428/12986: Adjacent functionally defined components
- Y10T 428/12993: Surface feature [e.g., rough, mirror]
- B32B: LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

Getter multilayer structures are disclosed, embodiments of which include at least a layer of a non-evaporable getter alloy having a low activation temperature over a layer of a different non-evaporable getter material having high specific surface area, both preferably obtained by cathodic deposition. The multilayer NEG structures exhibit better gas sorbing characteristics and lower activation temperature lower than those of deposits made up of a single material. A process for manufacturing such structures includes depositing a first, high surface area NEG film on a support, and then depositing a thin over layer of low activation NEG film.

## Claims

### Claim 1

A microelectromechanical device comprising a multilayer non-evaporable getter structure, wherein the getter structure comprises:
a first layer comprising a non-evaporable getter material having a surface area equivalent to at least 20 times its geometrical area, and
a second layer directly contacting the first layer, the second layer having a thickness not greater than 1 μm and comprising a non-evaporable getter alloy having a low activation temperature.

### Claim 2 (depends on 1)

The device of claim 1, wherein the second layer fully covers the first layer.

### Claim 3 (depends on 1)

The device of claim 1, wherein the getter material of the first layer comprises a component selected from the group consisting of zirconium, titanium, niobium, tantalum, vanadium, hafnium, and Zr—Co—A alloys, wherein A represents one or more elements selected from the group consisting of yttrium, lanthanum and the other rare earth elements.

### Claim 4 (depends on 1)

The device of claim 1, wherein A comprises lanthanum.

### Claim 5 (depends on 1)

The device of claim 1, wherein the thickness of the first layer ranges from about 0.2 μm to about 50 μm.

### Claim 6 (depends on 1)

The device of claim 1, wherein the thickness of the first layer ranges from about 10 μm to about 20 μm.

### Claim 7 (depends on 1)

The device of claim 1, wherein the surface area of the first layer is equivalent to at least about 50 times its geometrical area.

### Claim 8 (depends on 1)

The device of claim 1, wherein the getter alloy of the second layer comprises Zr and V.

### Claim 9 (depends on 8)

The device of claim 8, wherein the getter alloy of the second layer further comprises Fe, Ni, Mn, or Al.

### Claim 10 (depends on 9)

The device of claim 9, wherein the getter alloy of the second layer comprises about 70% Zr, about 24.6% V, and about 5.4% Fe by weight.

### Claim 11 (depends on 1)

The device of claim 1, wherein the getter alloy of the second layer comprises about 80% Zr, about 15% Co, and about 5% A by weight, wherein
A comprises an element selected from the group consisting of yttrium, lanthanum and the other rare earth elements; and
the composition of the second layer is different than the composition of the first layer.

### Claim 12 (depends on 11)

The device of claim 11, wherein A comprises lanthanum.

### Claim 13 (depends on 11)

The device of claim 11, wherein the first layer is not a Zr—Co—A alloy.

### Claim 14 (depends on 8)

The device of claim 8, wherein the getter alloy of the second layer is a Zr—Ti—V alloy.

### Claim 15 (depends on 14)

The device of claim 14, wherein the second layer comprises about 44% Zr, about 23% Ti, and about 33% V.

### Claim 16 (depends on 8)

The device of claim 8, wherein the getter alloy of the second layer is ZrV2.

### Claim 17 (depends on 1)

The device of claim 1, wherein the thickness of the second layer ranges from about 50 nm to about 500 nm.

### Claim 18 (depends on 1)

The device of claim 1 further including a deposit comprising palladium on a surface of the second layer, wherein the second layer is between the first layer and the deposit.

### Claim 19 (depends on 18)

The device of claim 18, wherein the deposit is a continuous layer.

### Claim 20 (depends on 18)

The device of claim 18, wherein the deposit is a discontinuous layer.

### Claim 21 (depends on 18)

The device of claim 18, wherein the deposit comprises a component selected from the group consisting of palladium oxide, a silver-palladium alloy, and a palladium compound comprising a metal species found in the second layer.

### Claim 22 (depends on 18)

The device of claim 18, wherein the deposit comprises a silver-palladium alloy having up to about 30 mole % of silver.

### Claim 23 (depends on 20)

The device of claim 20, wherein the discontinuous layer covers from about 10% to about 90% of the surface of the second layer.

### Claim 24 (depends on 18)

The device of claim 18, wherein the deposit has a thickness ranging from about 10 nm to about 100 nm.

### Claim 25 (depends on 1)

The device of claim 1, wherein the non-evaporable getter alloy having a low activation temperature is activated to at least about 90% activation when using a treatment time of about 1 hour and a treatment temperature of about 300° C.

### Claim 26

A microelectromechanical device comprising a getter structure, wherein the getter structure comprises:
a support;
a first layer disposed on a surface of the support and having a high surface area, wherein the first layer comprises a first non-evaporable getter; and
a second layer disposed on a surface of the first layer, wherein the second layer comprises a second non-evaporable getter alloy having a low activation temperature, and the surface of the first layer is between the support and the second layer.

### Claim 27 (depends on 26)

The device of claim 26, wherein the support comprises an inner surface of the microelectromechanical device.

### Claim 28 (depends on 26)

The device of claim 26, wherein the getter material of the first layer comprises a component selected from the group consisting of zirconium, titanium, niobium, tantalum, vanadium, hafnium, and Zr—Co—A alloys, wherein A represents one or more elements selected from the group consisting of yttrium, lanthanum and the other rare earth elements.

### Claim 29 (depends on 28)

The device of claim 28, wherein A comprises lanthanum.

### Claim 30 (depends on 26)

The device of claim 26, wherein the first layer and the second layer are cathodically deposited films.