# US 7,744,770 B2 · Device transfer method > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,744,770 B2 - Document ID: US7744770B2 - Status: Granted - Kind: B2 - Application number: 11/158,980 - Filed: 2005-06-22 - Published: 2006-01-12 - Granted: 2010-06-29 - Earliest claimed: 2004-06-23 - Assignees: Sony Corporation - Inventors: Masato Doi; Toyoharu Oohata - Web page: https://patentgrep.com/patent/US7744770B2 ## CPC - H10P 72/74: {using temporarily an auxiliary support} - B23K 26/066: by using masks - H10H 20/819: characterised by their shape, e.g. curved or truncated substrates - H10H 20/821: of the light-emitting regions, e.g. non-planar junctions - H10P 72/743: {used as a support during manufacture of interconnect decals or build up layers} - H10P 72/7432: {used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - B23K: SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract A device transfer method is provided. The device transfer method is disclosed by which, when a laser ablation technique is used to selectively exfoliate devices arranged on a substrate, the energy is transmitted efficiently to transfer the devices with a high degree of accuracy and at a high speed. A laser irradiation apparatus is used which includes a laser light source for generating a laser beam, a reflection section for reflecting the laser beam toward a required direction, and a control section for controlling whether or not the laser beam is to be irradiated in an interlocking relationship with the reflection section. The laser beam is selectively irradiated on a plurality of devices arranged on a transfer source substrate to cause laser ablation such that the selected devices are transferred to a transfer destination substrate by the selective laser ablation. ## Claims ### Claim 1 A device transfer method comprising: generating a laser beam from a laser light source; reflecting with a reflection section the laser beam generated from said laser light source toward a required direction, wherein the reflection section is oscillated over a fixed angle; uniformizing with a scanning lens light entering said scanning lens; controlling with a control section whether or not the laser beam is to be irradiated in an interlocking relationship with said reflection section, the scanning lens being interposed between said reflection section and said control section; and selectively irradiating the laser beam on a plurality of devices arranged on a transfer source substrate so that the devices that are selected are transferred to a transfer destination substrate by laser ablation caused by the irradiation of the laser beam, wherein a light intensity distribution of the laser beam is a Gaussian distribution. ### Claim 2 (depends on 1) The device transfer method according to claim 1, wherein the transfer source substrate or the devices pass the laser beam therethrough, and the devices are selectively exfoliated from the transfer source substrate utilizing laser ablation caused on an interface between the transfer source substrate and the devices so that the selectively exfoliated devices are transferred to the transfer destination substrate. ### Claim 3 (depends on 1) The device transfer method according to claim 1, wherein said laser light source is an ultraviolet laser. ### Claim 4 (depends on 1) The device transfer method according to claim 1, wherein said laser light source is a visible laser, and a metal film is formed on an interface between the transfer source substrate and the devices, the devices being transferred from the transfer source substrate to the transfer destination substrate utilizing laser ablation caused in proximity of said metal film by selective irradiation of visible rays from the visible laser on said metal film. ### Claim 5 (depends on 1) The device transfer method according to claim 1, wherein said reflection section is a galvano-mirror. ### Claim 6 (depends on 5) The device transfer method according to claim 5, wherein the laser beam reflected by said galvano-mirror is selectively irradiated upon the devices through a scanning lens. ### Claim 7 (depends on 6) The device transfer method according to claim 6, wherein said scanning lens is an fθ lens. ### Claim 8 (depends on 6) The device transfer method according to claim 6, wherein the laser beam is branched into a plurality of beams by a phase diffraction grating interposed between said scanning lens and the devices arranged on the transfer source substrate, and the branched laser beams are irradiated upon the transfer source substrate so that the devices are selectively transferred to the transfer destination substrate by the laser ablation. ### Claim 9 (depends on 1) The device transfer method according to claim 1, wherein said control section is formed from at least are of a shutter disposed on an optical path of the laser beam, a mask having an opening, and a control apparatus for controlling the irradiation of the laser beam from said laser light source. ### Claim 10 A device transfer method comprising: generating a laser beam from a laser light source; reflecting with a reflection section the laser beam from said laser light source toward a required direction, wherein the reflection section is oscillated over a fixed angle; uniformizing with a scanning lens light entering said scanning lens and a reducing projection optical section for reducing and projecting the laser beam reflected by said reflection section, the scanning lens being interposed between said reflection section and said control section; and selectively irradiating the reduced and projected laser beam through a mask on a plurality of devices arranged on a transfer source substrate so that the devices that are selected are transferred to a transfer destination substrate by laser ablation caused by the irradiation of the laser beam, wherein a light intensity distribution of the laser beam is a Gaussian distribution. ### Claim 11 (depends on 10) The device transfer method according to claim 10, wherein said reflection section is a galvano-mirror, and the laser beam enters said reducing projection optical section through said mask. ### Claim 12 A device transfer method comprising: generating a laser beam with a laser light source; reflecting with a reflection section the laser beam from said laser light source toward a required direction, wherein the reflection section is oscillated over a fixed angle; uniformizing with a scanning lens light entering said scanning lens and a reducing projection optical section for reducing and projecting the laser beam reflected by said reflection section, the scanning lens being interposed between said reflection section and said control section; and selectively irradiating the reduced and projected laser beam through a phase diffraction grating on a plurality of devices arranged on a transfer source substrate so that the devices that are selected are transferred to a transfer destination substrate, wherein a light intensity distribution of the laser beam is a Gaussian distribution. ### Claim 13 (depends on 12) The device transfer method according to claim 12, wherein said reflection section is a galvano-mirror, and the laser beam enters said reduction and projection optical section through said phase diffraction grating. ### Claim 14 A device thinning out method executed by a laser irradiation apparatus, the method comprising: generating a laser beam from a laser light source; reflecting with a reflection section the laser beam from said laser light source toward a required direction, wherein the reflection section is oscillated over a fixed angle; uniformizing with a scanning lens light entering said scanning lens; controlling with a control section whether or not the laser beam is to be irradiated in an interlocking relationship with said reflection section, the scanning lens being interposed between said reflection section and said control section; and selectively irradiating the laser beam on a plurality of devices arranged on a substrate so that the devices that are selected are exfoliated from the substrate by laser ablation caused by the irradiation of the laser beam thereby to thin out the devices, wherein a light intensity distribution of the laser beam is a Gaussian distribution. ### Claim 15 (depends on 1) The device transfer method according to claim 1, wherein the shape of said devices is set to a cylindrical shape. ### Claim 16 (depends on 1) The device transfer method according to claim 1, wherein the laser beam is irradiated as substantially uniform irradiation irrespective of whether a certain region of the transfer source substrate is located near to or away from an optical axis of the laser beam. ### Claim 17 (depends on 1) The device transfer method according to claim 1, wherein said reflection section is a biaxial galvano-mirror.