# US 7,744,768 B2 · Resist pattern thickening material, resist pattern and forming process thereof, and semiconductor device and manufacturing process thereof > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,744,768 B2 - Document ID: US7744768B2 - Status: Granted - Kind: B2 - Application number: 11/643,896 - Filed: 2006-12-22 - Published: 2007-05-10 - Granted: 2010-06-29 - Earliest claimed: 2001-11-27 - Assignees: Fujitsu Limited - Inventors: Miwa Kozawa; Koji Nozaki; Takahisa Namiki; Junichi Kon; Ei Yano - Web page: https://patentgrep.com/patent/US7744768B2 ## CPC - H10B 41/40: characterised by the peripheral circuit region - G03F 7/0035: {Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface} - G03F 7/40: Treatment after imagewise removal, e.g. baking - G11B 5/3163: {Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers} - H10B 41/48: with a tunnel dielectric layer also being used as part of the peripheral transistor - H10B 69/00: Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices - H10P 50/71: {using masks for conductive or resistive materials} - H10P 76/20: of masks comprising organic materials - H10P 76/204: {of organic photoresist masks} - G11B 5/17: Construction or disposition of windings - G11B 5/312: {for reducing flux leakage between the electrical coil layers and the magnetic cores or poles or between the magnetic cores or poles} - H10B: ELECTRONIC MEMORY DEVICES - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) - G11B: INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER (recording measured values in a way that does not require playback through a transducer G01D9/00; recording or playback apparatus using mechanically marked tape, e.g. punched paper tape, or using unit records, e.g. punched or magnetically marked cards G06K; transferring data from one type of record carrier to another G06K1/18; circuits for coupling output of reproducer to radio receiver H04B1/20; gramophone pick-ups or like acoustic electromechanical transducers or circuits therefor H04R) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A resist pattern thickening material has resin, a crosslinking agent and a compound having a cyclic structure, or resin having a cyclic structure at a part. A resist pattern has a surface layer on a resist pattern to be thickened with etching rate (nm/s) ratio of the resist pattern to be thickened the surface layer of 1.1 or more, under the same condition, or a surface layer to a resist pattern to be thickened. A process for forming a resist pattern includes applying the thickening material after forming a resist pattern to be thickened on its surface. A semiconductor device has a pattern formed by the resist pattern. A process for manufacturing the semiconductor device has applying, after forming a resist pattern to be thickened, the thickening material to the surface of the resist pattern to be thickened, and patterning the underlying layer by etching, the pattern as a mask. ## Claims ### Claim 1 A process for forming a resist pattern comprising: a step for applying a resist pattern thickening material so as to cover a surface of a resist pattern to be thickened after forming the resist pattern to be thickened, and so that the resist pattern to be thickened is thickened to form a resist pattern, wherein the resist pattern thickening material comprises: a resin; a crosslinking agent; a compound having a cyclic structure which is selected from an aromatic compound, an alicyclic compound, and a heterocyclic compound; and pure water, wherein the aromatic compound is selected from a polyphenol compound, a naphthalene polyvalent alcohol compound, a benzophenone compound, a flavonoid compound, and derivatives and glycosides thereof, the alicyclic compound is selected from polycycloalkane, cycloalkane, steroids, derivatives and glycosides thereof, and the heterocyclic compound is selected from pyrrolidine, pyridine, imidazole, oxazole, morpholine, furan, pyran, and saccharides. ### Claim 2 (depends on 1) A process for forming a resist pattern according to claim 1, wherein a development of the resist pattern thickening material is performed after applying the resist pattern thickening material. ### Claim 3 (depends on 2) A process for forming a resist pattern according to claim 2, wherein the development is performed by using deionized water. ### Claim 4 (depends on 1) A process for forming a resist pattern according to claim 1, wherein the resist pattern has a surface layer provided on the resist pattern to be thickened, with an etching rate (nm/s) ratio (resist pattern to be thickened/surface layer) of 1.1 or more under the same condition; and the etching rate (nm/s) ratio (resist pattern to be thickened/surface layer) is an etching rate (nm/s) ratio of the resist pattern to be thickened to the surface layer. ### Claim 5 (depends on 4) A process for forming a resist pattern according to claim 4, wherein the surface layer has at least one of a cyclic structure and a compound having a cyclic structure. ### Claim 6 (depends on 4) A process for forming a resist pattern according to claim 4, wherein a content of one of the cyclic structure and a compound having a cyclic structure is gradually reduced from the surface layer to an inner part. ### Claim 7 A process for forming a resist pattern comprising: a step for applying a resist pattern thickening material so as to cover a surface of a resist pattern to be thickened after forming the resist pattern to be thickened, and a step for heating the resist pattern thickening material so that the resist pattern to be thickened is thickened to form a resist pattern, wherein the resist pattern thickening material comprises: a resin; a crosslinking agent; a compound having a cyclic structure which is selected from an aromatic compound, an alicyclic compound, and a heterocyclic compound; and pure water, wherein the aromatic compound is selected from a polyphenol compound, a naphthalene polyvalent alcohol compound, a benzophenone compound, a flavonoid compound, and derivatives and glycosides thereof, the alicyclic compound is selected from polycycloalkane, cycloalkane, steroids, derivatives and glycosides thereof, and the heterocyclic compound is selected from pyrrolidine, pyridine, imidazole, oxazole, morpholine, furan, pyran, and saccharides.