# US 7,744,438 B2 · Production apparatus and method of producing a light-emitting device by using the same apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,744,438 B2 - Document ID: US7744438B2 - Status: Granted - Kind: B2 - Application number: 11/717,815 - Filed: 2007-03-14 - Published: 2007-09-20 - Granted: 2010-06-29 - Earliest claimed: 2002-07-09 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Inventors: Shunpei Yamazaki; Takashi Hamada; Satoshi Seo - Web page: https://patentgrep.com/patent/US7744438B2 ## CPC - H10K 71/135: {using ink-jet printing} - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES ## Abstract The present invention relates to a method for manufacturing a light-emitting device. At least one of a light-emitting film forming step, a conductive film forming step and an insulating film forming step is carried out while holding a substrate in a manner that an angle subtended by a surface of the substrate and the direction of gravity is within a range of from 0 to 30°. ## Claims ### Claim 1 An apparatus comprising: a loading chamber; a first chamber for forming a light-emitting film by a liquid jet method; a second chamber for forming a conductive film by a sputtering method; a third chamber for forming an insulating film by a sputtering method; and an unloading chamber, wherein a substrate is so supported that an angle subtended by a surface of the substrate to be treated and the direction of gravity is within from 0 to 30° in all of the loading chamber, the first chamber to the third chamber and the unloading chamber. ### Claim 2 (depends on 1) An apparatus according to claim 1, wherein the light-emitting film comprises at least one layer selected from the group consisting of a hole injection layer a hole-transporting layer, a hole-blocking layer, an electron injection layer, an electron-transporting layer and an electron-blocking layer. ### Claim 3 (depends on 1) An apparatus according to claim 1, wherein the conductive film is a metal film comprising an element belong to the Group 1 or the Group 2 of periodic table. ### Claim 4 (depends on 1) An apparatus according to claim 1, wherein the conductive film is an oxide conductive film. ### Claim 5 (depends on 1) An apparatus according to claim 1, wherein the insulating film comprises silicon nitride. ### Claim 6 (depends on 1) An apparatus according to claim 1, wherein the loading chamber and the unloading chamber are constituted as a unitary structure. ### Claim 7 An apparatus comprising: a loading chamber; a common chamber; a first chamber for forming a light-emitting film by a liquid jet method; a second chamber for forming a conductive film by a sputtering method; a third chamber for forming an insulating film by a sputtering method; and an unloading chamber, wherein a substrate is so supported that an angle subtended by a surface of the substrate to be treated and the direction of gravity is within from 0 to 30° in all of the loading chamber, the common chamber, the first chamber to the third chamber and the unloading chamber. ### Claim 8 (depends on 7) An apparatus according to claim 7, wherein the light-emitting film comprises at least one layer selected from the group consisting of a hole injection layer a hole-transporting layer, a hole-blocking layer, an electron injection layer, an electron-transporting layer and an electron-blocking layer. ### Claim 9 (depends on 7) An apparatus according to claim 7, wherein the conductive film is a metal film comprising an element belong to the Group 1 or the Group 2 of periodic table. ### Claim 10 (depends on 7) An apparatus according to claim 7, wherein the conductive film is an oxide conductive film. ### Claim 11 (depends on 7) An apparatus according to claim 7, wherein the insulating film comprises silicon nitride. ### Claim 12 (depends on 7) An apparatus according to claim 7, wherein the loading chamber and the unloading chamber are constituted as a unitary structure. ### Claim 13 An apparatus comprising: a loading chamber; a first chamber for forming a light-emitting film by a printing method; a second chamber for forming a conductive film by a sputtering method; a third chamber for forming an insulating film by a sputtering method; and an unloading chamber, wherein a substrate is so supported that an angle subtended by a surface of the substrate to be treated and the direction of gravity is within from 0 to 30° in all of the loading chamber, the first chamber to the third chamber and the unloading chamber. ### Claim 14 (depends on 13) An apparatus according to claim 13, wherein the light-emitting film comprises at least one layer selected from the group consisting of a hole injection layer a hole-transporting layer, a hole-blocking layer, an electron injection layer, an electron-transporting layer and an electron-blocking layer. ### Claim 15 (depends on 13) An apparatus according to claim 13, wherein the conductive film is a metal film comprising an element belong to the Group 1 or the Group 2 of periodic table. ### Claim 16 (depends on 13) An apparatus according to claim 13, wherein the conductive film is an oxide conductive film. ### Claim 17 (depends on 13) An apparatus according to claim 13, wherein the insulating film comprises silicon nitride. ### Claim 18 (depends on 13) An apparatus according to claim 13, wherein the loading chamber and the unloading chamber are constituted as a unitary structure. ### Claim 19 An apparatus comprising: a loading chamber; a common chamber; a first chamber for forming a light-emitting film by a printing method; a second chamber for forming a conductive film by a sputtering method; a third chamber for forming an insulating film by a sputtering method; and an unloading chamber, wherein a substrate is so supported that an angle subtended by a surface of the substrate to be treated and the direction of gravity is within from 0 to 30° in all of the loading chamber, the common chamber, the first chamber to the third chamber and the unloading chamber. ### Claim 20 (depends on 19) An apparatus according to claim 19, wherein the light-emitting film comprises at least one layer selected from the group consisting of a hole injection layer a hole-transporting layer, a hole-blocking layer, an electron injection layer, an electron-transporting layer and an electron-blocking layer. ### Claim 21 (depends on 19) An apparatus according to claim 19, wherein the conductive film is a metal film comprising an element belong to the Group 1 or the Group 2 of periodic table. ### Claim 22 (depends on 19) An apparatus according to claim 19, wherein the conductive film is an oxide conductive film. ### Claim 23 (depends on 19) An apparatus according to claim 19, wherein the insulating film comprises silicon nitride. ### Claim 24 (depends on 19) An apparatus according to claim 19, wherein the loading chamber and the unloading chamber are constituted as a unitary structure. ### Claim 25 An apparatus comprising: a loading chamber; a first chamber for forming a light-emitting film by a spray method; a second chamber for forming a conductive film by a sputtering method; a third chamber for forming an insulating film by a sputtering method; and an unloading chamber, wherein a substrate is so supported that an angle subtended by a surface of the substrate to be treated and the direction of gravity is within from 0 to 30° in all of the loading chamber, the first chamber to the third chamber and the unloading chamber. ### Claim 26 (depends on 25) An apparatus according to claim 25, wherein the light-emitting film comprises at least one layer selected from the group consisting of a hole injection layer a hole-transporting layer, a hole-blocking layer, an electron injection layer, an electron-transporting layer and an electron-blocking layer. ### Claim 27 (depends on 25) An apparatus according to claim 25, wherein the conductive film is a metal film comprising an element belong to the Group 1 or the Group 2 of periodic table. ### Claim 28 (depends on 25) An apparatus according to claim 25, wherein the conductive film is an oxide conductive film. ### Claim 29 (depends on 25) An apparatus according to claim 25, wherein the insulating film comprises silicon nitride. ### Claim 30 (depends on 25) An apparatus according to claim 25, wherein the loading chamber and the unloading chamber are constituted as a unitary structure. ### Claim 31 An apparatus comprising: a loading chamber; a common chamber; a first chamber for forming a light-emitting film by a spray method; a second chamber for forming a conductive film by a sputtering method; a third chamber for forming an insulating film by a sputtering method; and an unloading chamber, wherein a substrate is so supported that an angle subtended by a surface of the substrate to be treated and the direction of gravity is within from 0 to 30° in all of the loading chamber, the common chamber, the first chamber to the third chamber and the unloading chamber. ### Claim 32 (depends on 31) An apparatus according to claim 31, wherein the light-emitting film comprises at least one layer selected from the group consisting of a hole injection layer a hole-transporting layer, a hole-blocking layer, an electron injection layer, an electron-transporting layer and an electron-blocking layer. ### Claim 33 (depends on 31) An apparatus according to claim 31, wherein the conductive film is a metal film comprising an element belong to the Group 1 or the Group 2 of periodic table. ### Claim 34 (depends on 31) An apparatus according to claim 31, wherein the conductive film is an oxide conductive film. ### Claim 35 (depends on 31) An apparatus according to claim 31, wherein the insulating film comprises silicon nitride. ### Claim 36 (depends on 31) An apparatus according to claim 31, wherein the loading chamber and the unloading chamber are constituted as a unitary structure.