# US 7,743,482 B2 · Fabricating method of a semiconductor device

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- Number: US 7,743,482 B2
- Document ID: US7743482B2
- Status: Granted
- Kind: B2
- Application number: 11/863,407
- Filed: 2007-09-28
- Published: 2008-06-19
- Granted: 2010-06-29
- Earliest claimed: 2006-12-15
- Assignees: Dongbu HiTek Co., Ltd.
- Inventors: Jae Won Han
- Web page: https://patentgrep.com/patent/US7743482B2

## CPC

- H10W 90/00: Package configurations
- H10W 44/501: {Inductive arrangements (H10W44/20 takes precedence)}
- Y10T 29/49005: Acoustic transducer
- Y10T 29/49069: Data storage inductor or core
- Y10T 29/49073: by assembling coil and core
- Y10T 29/4908: Acoustic transducer
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

A semiconductor device and fabricating method thereof are provided. A first substrate with an inductor cell and a through-electrode is connected to a second substrate having an RF device circuit unit. The first substrate can be stacked on the second substrate, and a connecting electrode can electrically connect the inductor cell to the RF device circuit unit.

## Claims

### Claim 1

A fabricating method of a semiconductor device, comprising:
providing a first substrate comprising an inductor cell and a through-electrode;
providing a second substrate comprising a radio frequency (RF) device circuit;
stacking the first substrate on the second substrate; and
electrically connecting the inductor cell to the RF device circuit unit;
wherein a process for forming the first substrate comprises:
forming the through-electrode on the first substrate;
depositing a metal film on the first substrate;
patterning the metal film to form the inductor cell;
forming an insulating layer on the inductor cell;
performing a polishing process on the insulating layer until inductor cell is exposed; and
performing a polishing process on the first substrate until a lower surface of the through-electrode is exposed.

### Claim 2 (depends on 1)

The method according to claim 1, wherein electrically connecting the inductor cell to the RF device circuit unit comprises electrically connecting the inductor cell to the RF device circuit unit through a connecting electrode.

### Claim 3 (depends on 2)

The method according to claim 2, wherein the connecting electrode is electrically connected to the inductor cell through the through-electrode.

### Claim 4 (depends on 1)

The method of claim 1, further comprising forming a protective layer on the insulating layer and the inductor cell.

### Claim 5 (depends on 1)

The method of claim 1, wherein the through-electrode is formed to a depth of about 50 μm to about 500 μm, and wherein the through-electrode is formed with a critical dimension (CD) of about 1 μm to about 10 μm.

### Claim 6 (depends on 1)

The method according to claim 1, wherein the insulating layer comprises at least one material selected from the group consisting of Si02, BPSG, TEOS, and SiN.

### Claim 7 (depends on 1)

The method according to claim 1, wherein the inductor cell comprises at least one material selected from the group consisting of W, Cu, Al, Ag, and Au.

### Claim 8 (depends on 1)

The method according to claim 1, wherein the through-electrode comprises at least one material selected from the group consisting of W, Cu, Al, Ag, and Au.

### Claim 9 (depends on 1)

The method according to claim 1, wherein the through-electrode is formed on a scribe lane of the first substrate.

### Claim 10 (depends on 1)

The method according to claim 1, wherein the through-electrode comprises a barrier metal, and wherein the barrier metal comprises at least one material selected from the group consisting of Ti, TiN, Ti/TiN, Ta, Ta/N, Ta/TaN, Ta/TaN, Co, Co compound, Ni, Ni compound, W, W compound, and nitride.