Variable sense level for fuse-based non-volatile memory
AssigneeSilicon Laboratories Inc.
InventorsSusumu Hara, Jeffrey S. Batchelor, Jeffrey L. Sonntag
Life of this patent
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AssigneeSilicon Laboratories Inc.
InventorsSusumu Hara, Jeffrey S. Batchelor, Jeffrey L. Sonntag
Estimating the term…
Techniques for use with a fuse-based non-volatile memory circuit include digitally controlling a resistance threshold of the circuit. The circuit includes a fuse circuit and a comparator circuit. The comparator circuit is configured to compare a first signal indicative of the fuse resistance to a second signal indicative of a reference level. At least one of the first and second signals is digitally controllable. The comparator circuit is configured to generate a digital output signal indicative of the comparison. The circuit may include a first digital-to-analog converter circuit configured to generate a first analog signal based on at least a first plurality of digital signals. The first signal is at least partially based on the first analog signal. The circuit may include a control circuit configured to digitally control the digitally controllable ones of the first and second signals at least partially based on the digital output signal.
A circuit comprising:
A circuit comprising:
A circuit comprising:
A method comprising:
An apparatus comprising:
Dependencies are inferred from the claim text.