Voltage generating circuit and reference voltage generating circuit for semiconductor memory apparatus, and semiconductor system using the same
AssigneeHynix Semiconductor Inc.
InventorsDong Uk Lee, Shin Deok Kang
Life of this patent
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Abstract
A voltage generating circuit for a semiconductor memory apparatus according includes a data logic voltage generating unit that, when a data output unit outside a semiconductor memory apparatus outputs low-level data, generates an internal data logic voltage at the same potential level as the low-level data in response to an on-die termination signal. In addition, a reference voltage generating circuit for a semiconductor memory apparatus that uses the voltage generating circuit includes a reference voltage generating unit that can be configured to generate a reference voltage at an average potential level between a maximum potential and a minimum potential of input data.
Claims20
A voltage generating circuit for a semiconductor memory apparatus, comprising:
- a data logic voltage generating unit configured to generate an internal data logic voltage at the same potential level as low-level data in response to an on-die termination signal,
- wherein the data logic voltage generating unit receives the low-level data received from an external data output unit and the on-die termination signal.
A reference voltage generating circuit for a semiconductor memory apparatus, comprising:
- a data logic voltage generating unit that generates a data logic voltage at the same potential level as a minimum potential of input data;
- and
- a reference voltage generating unit that generates a reference voltage at an average potential level between the minimum potential output from the data logic voltage generating unit and a maximum potential of the input data.
A semiconductor system comprising:
- an external data output unit that outputs data to a semiconductor memory apparatus;
- a data logic voltage generating unit that generates a first division ratio of first impedance of the external data output unit, which outputs low-level data, and second impedance to be generated in response to an on-die termination signal, and a second division ratio of the second impedance and third variable impedance that is the same as the first division ratio;
- and
- a reference voltage generating unit that generates reference voltage at an average voltage level of an internal data logic voltage, which is obtained by dividing an external voltage according to the second division ratio, and the external voltage.
Dependencies are inferred from the claim text.