Metal oxide semiconductor device and method for operating an array structure comprising the same devices

A method for operating a metal oxide semiconductor device array structure, wherein said metal oxide semiconductor device array structure comprises a plurality of metal oxide semiconductor devices, a plurality of bit-line selection switches, a plurality of bit lines, a plurality of word lines, a plurality of source-line selection switches and a plurality of source lines;

• each said metal oxide semiconductor device comprises a device layer having at least two surfaces, at least one ion-implanted layer formed on said surfaces of said device layer and providing at least one source, at least one drain region and at least one channel region, and at least one gate structure formed on said ion-implanted layer;
• each said bit line is coupled to corresponding said metal oxide semiconductor devices via one corresponding bit-line selection switch, and said bit line is coupled to said bit-line selection switch via a bit-line contact window;
• said word lines are formed via interconnecting said gate structure;
• said source line is coupled to said source-line selection switch, and said source-line selection switches are coupled to said metal oxide semiconductor devices, and wherein said method for operating a metal oxide semiconductor device array structure comprises following steps:
• (a) turning on said bit-line selection switch, which is coupled to said bit line and said metal oxide semiconductor devices, and turning on said source-line selection switch of said source line;
• (b) selecting at least one said metal oxide semiconductor device via said word line, said source line and said bit line;
• (c) respectively applying bias voltages to said metal oxide semiconductor device via said bit line, said source line and said word line;
• and
• (d) receiving said bias voltages and changing charge storage state of a corresponding storage layer inside said metal oxide semiconductor device.