Semiconductor memory device and related programming method
AssigneeSamsung Electronics Co., Ltd.
InventorsBo-Geun Kim, Heung-Soo Lim, Jae-Woo Im
Life of this patent
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Abstract
A NOR flash memory device and related programming method are disclosed. The programming method includes programming data in a memory cell and, during a program verification operation, controlling the supply of current from a sense amplifier to the memory cell in relation to the value of the programmed data. Wherein a program verification operation is indicated, current is provided from the sense amplifier to the memory cell. Where a program verification operation is not indicated, current is cut off from the sense amplifier.
Claims7
A programming method for a flash memory device, the programming method comprising:
- programming data having an intended data state in one memory cell of a plurality of memory cells;
- and
- during a program verification operation performed subsequent to the programming of the data in the one memory cell, selectively enabling a supply of current to the one memory cell, only if
- (a) the intended data state is not an erase state, and
- (b) sensed data for the one memory cell following the programming of data in the one memory cell is not the intended data state.
A programming method for a flash memory device, the programming method comprising:
- programming program data having a data state other than an erase state in a first set of memory cells in a plurality of memory cells, while retaining an erase state in a second set of memory cells in the plurality of memory cells, wherein the first and second sets of memory cells include at least one memory cell;
- sensing data stored in the plurality of memory cells;
- and
- during a program verification operation performed subsequent to the programming of the program data in the first set of memory cells, selectively enabling a supply of current to each memory cell in the plurality of memory cells, only if
- (a) the memory cell is not included in the second set of memory cells, and
- (b) data sensed for the memory cell is not equal to the program data.
A programming method for a flash memory device, the programming method comprising:
- programming program data having a data state other than an erase state in a first set of memory cells in a plurality of memory cells, while retaining an erase state in a second set of memory cells in the plurality of memory cells, wherein the first and second sets of memory cells include at least one memory cell;
- sensing data stored in the plurality of memory cells and returning for each memory cell in the plurality of memory cells either a program pass result or a program fail result;
- and
- during a program verification operation performed subsequent to the programming of the program data in the first set of memory cells, selectively enabling a supply of current to each memory cell in the plurality of memory cells, only if
- (a) the memory cell is not included in the second set of memory cells, and
- (b) the memory cell has a program fail result.
Dependencies are inferred from the claim text.