Read reference technique with current degradation protection

A method comprising:

• providing a memory comprising a bit cell array, a plurality of reference cells associated with a plurality of bit cells of the bit cell array, and a sense amplifier;
• at a first event, configuring the sense amplifier to utilize an output current of a first reference cell of the plurality of reference cells in response to determining the output current of the first reference cell is the highest output current of the plurality of reference cells at the first event;
• at a second event subsequent to the first event, configuring the sense amplifier to utilize an output current of a second reference cell of the plurality of reference cells in response to determining the output current of the second reference cell is the highest output current of the plurality of reference cells at the second event.

The method of 9, further comprising:

• at a third event, configuring the sense amplifier to utilize the output current of the first reference cell in response to determining the output current of the first reference cell is the highest output current of the plurality of reference cells at the third event.