Magnetic memory device using domain structure and multi-state of ferromagnetic material
AssigneeKorea University Industrial & Academic Collaboration Foundation
InventorsSang-Hoon Lee, Dong-Yun Shin
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Abstract
Disclosed is a memory device using a multi-domain state of a semiconductor material, and more particularly to a magnetic memory device, in which a ferromagnetic layer for recording magnetic data serves as a sensing layer so as to have a simple structure, shorten a manufacturing process, and reduce the unit cost of production. The planar hall effect or magneto-resistance is used to measure multi-domain states so as to read data stored in a multi-level state.
Claims8
A magnetic memory device using a domain structure and multi-state of a ferromagnetic material comprising:
- a substrate;
- a ferromagnetic thin film layer formed on the substrate, and storing and sensing the multi-state through a planar hall effect or magneto-resistance using a multi-domain state;
- an insulating film formed on the ferromagnetic thin film layer;
- first current lines formed on the insulating film;
- an insulating film formed on the first current lines;
- and
- second current lines formed on the insulating film.
A magnetic memory device using a domain structure and multi-state of a ferromagnetic material comprising:
- a substrate;
- first current lines formed on the substrate;
- an insulating film formed on the first current lines;
- a ferromagnetic layer formed on the insulating film, and storing and sensing multi-data through a planar hall effect or magneto-resistance using a single domain or multi-domain state;
- an insulating film formed on the ferromagnetic layer;
- and
- second current lines formed on the insulating film.
Dependencies are inferred from the claim text.