Word line transistor strength control for read and write in spin transfer torque magnetoresistive random access memory
AssigneeQUALCOMM Incorporated
InventorsSei Seung Yoon, Seung H Kang, Medi Hamidi Sani
Life of this patent
Estimating the term…
Abstract
Systems, circuits and methods for controlling word line voltage at a word line transistor in Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) are disclosed. A first voltage can be supplied to the word line transistor for write operations. A second voltage, which is less than the first voltage, can be supplied to the word line transistor during read operations.
Claims29
A Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) comprising:
- a bit cell having a magnetic tunnel junction (MTJ) and a word line transistor, wherein the bit cell is coupled to a bit line and a source line;
- and
- a word line driver coupled to a gate of the word line transistor, wherein the word line driver is configured to provide a first voltage for a write operation;
- and a second voltage during a read operation, and wherein the first voltage is higher than the second voltage.
A method for read and write operations in a Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) comprising:
- applying a first voltage to a gate of a word line transistor of a bit cell during a write operation;
- and
- applying a second voltage to the word line transistor during a read operation, wherein the first voltage is higher than the second voltage.
An apparatus for read and write operations in a Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) comprising:
- means for applying a first voltage to a gate of a word line transistor of a bit cell during a write operation;
- and
- means for applying a second voltage to the word line transistor during a read operation, wherein the first voltage is higher than the second voltage.
Dependencies are inferred from the claim text.