Magnetoresistance device with a diffusion barrier between a conductor and a magnetoresistance element and method of fabricating the same

A magnetoresistance device comprising:

• a magnetoresistance element including:
• a free ferromagnetic layer having reversible spontaneous magnetization,
• a fixed ferromagnetic layer having fixed spontaneous magnetization, and
• a tunnel dielectric layer disposed between said free and fixed ferroelectric layer;
• a non-magnetic conductor electrically connected to said fixed ferromagnetic layer without involving said tunnel dielectric layer to provide electrical connection between said magnetoresistance element to another element;
• and
• a diffusion barrier structure connected between said non-magnetic conductor and said fixed ferromagnetic layer,
• wherein said diffusion barrier structure is formed of material selected from the group consisting of:
• MgOx, CaOx, LiOx, and HfOx,
• said magnetoresistance element further includes a manganese-including antiferromagnetic layer, and
• said antiferromagnetic layer is positioned between said fixed ferromagnetic layer and said diffusion barrier layer.