# US 7,742,262 B2 · Magnetoresistive element, magnetic head, magnetic recording apparatus, and magnetic memory

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- Number: US 7,742,262 B2
- Document ID: US7742262B2
- Status: Granted
- Kind: B2
- Application number: 11/848,374
- Filed: 2007-08-31
- Published: 2007-12-27
- Granted: 2010-06-22
- Earliest claimed: 2004-07-30
- Assignees: Kabushiki Kaisha Toshiba
- Inventors: Hideaki Fukuzawa; Hiromi Yuasa; Hitoshi Iwasaki
- Web page: https://patentgrep.com/patent/US7742262B2

## CPC

- G11B 5/3932: {Magnetic biasing films}
- B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
- B82Y 25/00: Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
- G01R 33/093: {using multilayer structures, e.g. giant magnetoresistance sensors (thin magnetic films H01F10/00)}
- G11B 2005/3996: {large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices}
- G11B: INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER (recording measured values in a way that does not require playback through a transducer G01D9/00; recording or playback apparatus using mechanically marked tape, e.g. punched paper tape, or using unit records, e.g. punched or magnetically marked cards G06K; transferring data from one type of record carrier to another G06K1/18; circuits for coupling output of reproducer to radio receiver H04B1/20; gramophone pick-ups or like acoustic electromechanical transducers or circuits therefor H04R)
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- G01R: MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES (indicating correct tuning of resonant circuits H03J3/12)

## Abstract

A magnetoresistive element includes a first magnetic layer a magnetization direction of which is substantially pinned, a second magnetic layer a magnetization direction of which varies depending on an external field, a magnetic spacer layer provided between the first magnetic layer and the second magnetic layer, and electrodes which supply a current perpendicularly to a plane of a stacked film including the first magnetic layer, the magnetic spacer layer and the second magnetic layer. In this element, the magnetization directions of the first and the second magnetic layers are substantially orthogonal at zero external field.

## Claims

### Claim 1

A magnetoresistive element comprising:
a first magnetic layer a magnetization direction of which is substantially pinned;
a second magnetic layer a magnetization direction of which varies depending on an external field;
a magnetic spacer layer provided between the first magnetic layer and the second magnetic layer;
a biasing layer which biases a magnetization direction of the second magnetic layer, the biasing layer being stacked on the second magnetic layer; and
electrodes which supply a current perpendicularly to a plane of a stacked film including the first magnetic layer, the magnetic spacer layer and the second magnetic layer, the magnetization directions of the first and the second magnetic layers being substantially orthogonal at zero external field.

### Claim 2 (depends on 1)

The magnetoresistive element according to claim 1, wherein the biasing layer is formed of a material selected from the group consisting of Co, CoPt, CoCrPt, IrMn, PtMn, PdPtMn, RuMn, and RuRhMn.

### Claim 3 (depends on 1)

The magnetoresistive element according to claim 1, wherein the magnetic spacer layer has a thickness of 0.5 nm or more and 4 nm or less.

### Claim 4 (depends on 1)

The magnetoresistive element according to claim 1, wherein the biasing layer is configured to make a magnetization direction of the second magnetic layer substantially orthogonal to that of the first magnetic layer.

### Claim 5 (depends on 1)

The magnetoresistive element according to claim 1, wherein the biasing layer is a hard film or an antiferromagnetic layer.

### Claim 6 (depends on 5)

The magnetoresistive element according to claim 5, wherein the hard film contains 50% of Co, CoPt, or CoCrPt, and is stacked on the second magnetic layer to a thickness of 2 nm or more and 20 nm or less.

### Claim 7 (depends on 1)

The magnetoresistive element according to claim 1, wherein the biasing layer is stacked directly on top of the second magnetic layer.