US 7,742,113 B2Granted

Liquid crystal display device

AssigneeHitachi Displays, Ltd.

InventorsHideo Tanabe, Masaru Takabatake, Toshiki Kaneko, Atsushi Hasegawa, Hiroko Sehata

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Abstract

A liquid crystal display device includes first and second opposed facing substrates and liquid crystal sandwiched therebetween. The first substrate includes a thin film transistor having a first electrode thereof connected to a video signal line and a second electrode thereof connected to a pixel electrode, a first silicon nitride film, an organic insulation film, a capacitance electrode, and a second silicon nitride film. The second silicon nitride film is formed at a temperature lower than a forming temperature of the first silicon nitride film. The second electrode and the pixel electrode are connected to each other via a contact hole formed by the first and second silicon nitride films. A potential different from a potential applied to the pixel electrode is applied to the capacitance electrode, and a holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.

Claims19

Dependent claims

A liquid crystal display device comprising:

a first substrate including a video signal line, a pixel electrode, a thin film transistor having a first electrode thereof connected to the video signal line and a second electrode thereof connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film formed above the first silicon nitride film, a capacitance electrode formed above the organic insulation film, and a second silicon nitride film formed above the capacitance electrode and below the pixel electrode;
a second substrate arranged to face the first substrate in an opposed manner;
and
liquid crystal sandwiched between the first substrate and the second substrate, wherein
the first silicon nitride film is more dense than the second silicon nitride film,
the first silicon nitride film and the second silicon nitride film form a contact hole therein which penetrates both of the first silicon nitride film and the second silicon nitride film collectively,
the second electrode and the pixel electrode are connected to each other via the contact hole,
the second silicon nitride film is not in contact with the second electrode,
a potential different from a potential applied to the pixel electrode is applied to the capacitance electrode, and a holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application: 11/802,385Filed 22 May 2007
Priority: JP 2006-1604289 Jun 2006
Published: US 2007/0298538 A127 Dec 2007
Granted: 22 Jun 2010
Term ends: Not estimatedThe source records don’t support an estimate.

Classification16 codes

G02F 1/133345
Constructional arrangements; Manufacturing methods: insulating layers
G02F 1/133305
Constructional arrangements; Manufacturing methods: flexible substrates, e.g. plastics, organic film
G02F 1/136213
Active matrix addressed cells: storage capacitors associated with the pixel electrode
G02F 1/136227
Active matrix addressed cells: through-hole connection of the pixel electrode to the active element through an insulation layer