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US 7,741,897 B1Granted
Method and apparatus for self gate pumped NMOS high speed switch
AssigneeIntegrated Device Technology, Inc.
InventorsTacettin Isik, Siyou Weng
Life of this patent
Estimating the term…
Abstract
A method and apparatus for self gate pumped NMOS high speed switch have been disclosed.
Claims2
An apparatus comprising:
- a first NMOS transistor having a gate, a source, and a drain, said source capable of being operatively coupled to an input, said drain capable of being operatively coupled to an output;
- a first diode having an anode and a cathode, said cathode operatively coupled to said first NMOS transistor gate;
- a first PMOS transistor having a gate, a source, and a drain, said source capable of being operatively coupled to a first supply voltage, said drain operatively coupled to said first diode anode;
- a second NMOS transistor having a gate, a source, and a drain, said drain capable of being operatively coupled to said first NMOS transistor gate, said source capable of being operatively coupled to a second supply voltage, and said gate operatively coupled to said first PMOS transistor gate;
- a second PMOS transistor having a gate, a source, and a drain, said source capable of being operatively coupled to said input, said drain capable of being operatively coupled to said output;
- a second diode having an anode and a cathode, said anode operatively coupled to said second PMOS transistor gate;
- a third NMOS transistor having a gate, a source, and a drain, said source capable of being operatively coupled to said second supply voltage, said drain operatively coupled to said second diode cathode;
- and
- a third PMOS transistor having a gate, a source, and a drain, said drain capable of being operatively coupled to said second PMOS transistor gate, said source capable of being operatively coupled to said first supply voltage, and said gate operatively coupled to said third NMOS transistor gate.
6 more elements
Dependencies are inferred from the claim text.