Method of switching and switching device for solid state power controller applications

A method of switching a solid state switching device having at least one metal oxide semiconductor field effect transistor and at least one insulated gate bipolar transistor connected in parallel comprising the steps of:

• connecting on demand a power input to a power output through said insulated gate bipolar transistor;
• delaying for the dissipation of inrush current of said insulated gate bipolar transistor;
• connecting said power input to said power output through said metal oxide semiconductor field effect transistor;
• conveying negative feedback from said power output to said insulated gate bipolar transistor;
• disconnecting on demand said power input to said power output through said metal oxide semiconductor field effect transistor;
• delaying for switching off of said metal oxide semiconductor field effect transistor;
• and
• disconnecting said power input from said power output through said insulated gate bipolar transistor.

A solid state switching device comprising:

• a first metal oxide semiconductor field effect transistor;
• and
• a first insulated gate bipolar transistor connected in parallel with said metal oxide semiconductor field effect transistor;
• a reverse biased zener diode connecting a collector and a gate of said first insulated gate bipolar transistor;
• wherein said first metal oxide semiconductor field effect transistor turns on with a first predetermined delay after said first insulated gate bipolar transistor turns on and said first insulated gate bipolar transistor turns off with a second predetermined delay after said first metal oxide semiconductor field effect transistor turns off.