Non contact method and apparatus for measurement of sheet resistance of p-n junctions
AssigneeAhbee 1, L.P.
InventorsVladimir Faifer, Phuc Van
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Abstract
A contactless sheet resistance measurement apparatus and method for measuring the sheet resistance of upper layer of ultra shallow p-n junction is disclosed. The apparatus comprises alternating light source optically coupled with first transparent and conducting electrode brought close to the wafer, the second electrode placed outside of illumination area. Using the measurement of the surface photovoltage signals inside illuminated area and outside this area and its phase shifts, linear SPV model describing its lateral distribution the sheet resistance and p-n junction conductance is determined.
Claims1
A contactless sheet resistance measurement method, comprising the steps of:
- illumination of the area of the semiconductor structure with known sheet resistance through a transparent electrode with intensity modulated light;
- measurement of the SPV signal from the transparent electrode;
- adjustment of the light flux to obtain linear dependence of the SPV signal versus light flux;
- measurement of SPV signals Vs0;
- measurement of SPV signal Vs1 at the same conditions for wafer with unknown Rs;
- and
- determination of the sheet resistance using measured RATIO=Vs1/Vs0, and the calculated curve or table RATIO(Rs).
Dependencies are inferred from the claim text.