Thick film dielectric structure for thick dielectric electroluminescent displays

A sintered composite thick film dielectric structure for an electroluminescent display, said structure comprising:

• (a) a lower layer of a thick film dielectric composition comprising one or more of lead magnesium niobate (PMN), lead magnesium niobate-titanate (PMN-PT), lead titanate, barium titanate and lead oxide;
• a glass frit composition comprising lead oxide, boron oxide and silicon dioxide;
• and
• (b) an upper smoothing layer comprising at least one layer of lead zirconate titanate (PZT), wherein said at least one layer directly adjacent to (a) has an areal density of pit defects of about less than 100 defects per square millimeter and is made by the addition of a surfactant to a metal organic solution or a sol gel of organo metallic precursor compounds that is subsequently sintered on said thick film dielectric layer, wherein said surfactant is selected from the group consisting of a non-ionic surfactant selected from the group consisting of dimethyl hexynol, ethoxylated acetylenic diols, p-tertiary octylphenoxy polyethyl alcohol and mixtures thereof and an anionic surfactant selected from the group consisting of alkyl ether phosphate, cetyltrimethylammonium bromide and mixtures thereof.