Electrical fuses and resistors having sublithographic dimensions

A semiconductor structure comprising:

• a shallow trench isolation comprising a dielectric material and located in a semiconductor substrate;
• a plurality of parallel conductive lines having a width of a first sublithographic dimension and located on said semiconductor substrate, wherein each of said plurality of conductive lines has a pair of sidewall surfaces that are parallel to a first vertical plane that is orthogonal to a top surface of said semiconductor substrate, wherein each adjacent pair of said parallel conductive lines is separated by a second sublithographic dimension, and wherein multiple edges of said plurality of parallel conductive lines are located substantially on a second vertical plane that is orthogonal to said top surface of said semiconductor substrate and located at a non-orthogonal angle from said first vertical plane, each of said multiple edges being directly adjoined to one of said pairs of sidewall surfaces;
• a first electrode contacting all of said plurality of parallel conductive lines;
• and
• a second electrode contacting only one of said plurality of parallel conductive lines.