Metal line of semiconductor device and method of fabricating the same

A metal line of a semiconductor device comprising:

• contact plugs formed over a semiconductor substrate and insulated from each other by a first insulating layer;
• a plurality of first metal lines formed in the first insulating layer and connected to first contact plugs of the contact plugs, which belong to one of an odd-numbered group and an even-numbered group;
• a plurality of conductive layers formed over second contact plugs, which belong to the other of the odd-numbered group and the even-numbered group of the contact plugs;
• forming a second insulating layer over the first insulating layer between the first metal lines and the conductive layers;
• and
• a plurality of second metal lines formed over the second insulating layer and electrically connected to the conductive layers.

A method of forming metal lines of a semiconductor device, comprising:

• providing a semiconductor substrate in which contact plugs insulated by a first insulating layer are formed;
• forming first trenches connected to first contact plugs of the contact plugs, which belong to one of an odd-numbered group and an even-numbered group, in the first insulating layer;
• forming first metal lines within the first trenches;
• forming a second insulating layer over the first insulating layer comprising the first metal lines;
• forming second trenches in the second insulating layer so that second contact plugs of the contact plugs, which belong to the other of the odd-numbered group and the even-numbered group, are exposed;
• and
• forming second metal lines in the second trenches.

A method of forming metal lines of a semiconductor device, comprising:

• providing a semiconductor substrate in which contact plugs insulated by a first insulating layer are formed;
• forming a conductive layer over first contact plugs of the contact plugs, which belong to one of an odd-numbered group and an even-numbered group, and forming first metal lines connected to second contact plugs, which belong to the other of the odd-numbered group and the even-numbered group, over the first insulating layer;
• forming a second insulating layer over the first insulating layer between the conductive layer and the first metal lines;
• and
• forming second metal lines connected to the conductive layer over the second insulating layer.